GP1M009A050XXX Datasheet and Replacement
Type Designator: GP1M009A050XXX
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 127 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 120 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
Package: TO-220 TO-220F
GP1M009A050XXX substitution
GP1M009A050XXX Datasheet (PDF)
gp1m009a050xxx.pdf
GP1M009A050HSGP1M009A050FSHN-channel MOSFETFeaturesBVDSS ID RDS(on) Low gate charge500V 8.5A
gp1m009a090xx.pdf
GP1M009A090HGP1M009A090FHVDSS = 990 V @TjmaxFeaturesID = 9A Low gate chargeRDS(ON) = 1.4 (max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification DGSDevice Package Marking RemarkGP1M009A090H TO-220 GP1M009A090H RoHSGP1M009A090FH TO-220F GP1M009A090FH Halogen FreeAbsolute M
gp1m009a090n.pdf
GP1M009A090N N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 100% avalanche tested 900V 9.5A
gp1m009a070x.pdf
GP1M009A070HGP1M006A070FN-channel MOSFETFeaturesBVDSS ID RDS(on) Low gate charge700V 7A
Datasheet: GP1M007A065XX , GP1M007A090XX , GP1M008A025XX , GP1M008A050XG , GP1M008A050XX , GP1M008A080XX , GP1M009A020XG , GP1M009A020XX , IRF740 , GP1M009A060XX , GP1M009A070X , GP1M009A090N , GP1M009A090XX , GP1M010A060XX , GP1M010A080N , GP1M010A080XX , GP1M011A050XX .
History: AP70SL1K4AH | DMG8880LSS | IXFV110N10P | CS65N20-30 | SQM90142E | IPB120N08S4-03 | C3M0065100K
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History: AP70SL1K4AH | DMG8880LSS | IXFV110N10P | CS65N20-30 | SQM90142E | IPB120N08S4-03 | C3M0065100K
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