All MOSFET. GP1M009A050XXX Datasheet

 

GP1M009A050XXX Datasheet and Replacement


   Type Designator: GP1M009A050XXX
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 127 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 8.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: TO-220 TO-220F
      - MOSFET Cross-Reference Search

 

GP1M009A050XXX Datasheet (PDF)

 ..1. Size:408K  globalpower
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GP1M009A050XXX

GP1M009A050HSGP1M009A050FSHN-channel MOSFETFeaturesBVDSS ID RDS(on) Low gate charge500V 8.5A

 5.1. Size:390K  globalpower
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GP1M009A050XXX

GP1M009A090HGP1M009A090FHVDSS = 990 V @TjmaxFeaturesID = 9A Low gate chargeRDS(ON) = 1.4 (max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification DGSDevice Package Marking RemarkGP1M009A090H TO-220 GP1M009A090H RoHSGP1M009A090FH TO-220F GP1M009A090FH Halogen FreeAbsolute M

 5.2. Size:539K  globalpower
 gp1m009a090n.pdf pdf_icon

GP1M009A050XXX

GP1M009A090N N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 100% avalanche tested 900V 9.5A

 5.3. Size:378K  globalpower
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GP1M009A050XXX

GP1M009A070HGP1M006A070FN-channel MOSFETFeaturesBVDSS ID RDS(on) Low gate charge700V 7A

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History: SQ9407EY-T1 | CHM85A3PAGP | TK7P65W | ALD1103DB | SFFX054Z

Keywords - GP1M009A050XXX MOSFET datasheet

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