GP1M011A050XXX MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: GP1M011A050XXX
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 158 W
Voltaje máximo drenador - fuente |Vds|: 500 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 10 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 3.5 V
Carga de la puerta (Qg): 28 nC
Tiempo de subida (tr): 40 nS
Conductancia de drenaje-sustrato (Cd): 374 pF
Resistencia entre drenaje y fuente RDS(on): 0.7 Ohm
Paquete / Cubierta: TO-220 TO-220F
Búsqueda de reemplazo de MOSFET GP1M011A050XXX
GP1M011A050XXX Datasheet (PDF)
gp1m011a050xxx.pdf
GP1M011A050HSGP1M011A050FSHVDSS = 550 V @TjmaxFeaturesID = 10A Low gate chargeRDS(ON) = 0.7 (max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery DGSDevice Package Marking RemarkGP1M011A050HS TO-220 GP1M011A050HS RoHS/Fast DiodeGP1M011A050FSH TO
gp1m011a050xx.pdf
GP1M011A050HGP1M011A050FHVDSS = 550 V @TjmaxFeaturesID = 11A Low gate chargeRDS(ON) = 0.67 (max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery DGSDevice Package Marking RemarkGP1M011A050H TO-220 GP1M011A050H RoHSGP1M011A050FH TO-220F GP1M011A0
gp1m013a050xx.pdf
GP1M013A050HGP1M013A050FHVDSS = 550 V @TjmaxFeaturesID = 13A Low gate chargeRDS(on) = 0.48 (max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC QualificationDGSDevice Package Marking RemarkGP1M013A050H TO-220 GP1M013A050H RoHSGP1M013A050FH TO-220F GP1M013A050FH Halogen FreeAbsolute
gp1m018a020xx.pdf
GP1M018A020HG(H)GP1M018A020FG(H)N-channel MOSFETFeatures Low gate chargeBVDSS ID RDS(on)MAX 100% avalanche tested200V 18A
gp1m018a020xg.pdf
GP1M018A020CG GP1M018A020PG N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) MAX 100% avalanche tested 200V 18A
gp1m015a050xx.pdf
GP1M015A050HGP1M015A050FHVDSS = 550 V @TjmaxFeaturesID = 14A Low gate chargeRDS(on) = 0.44 (max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC QualificationDGSDevice Package Marking RemarkGP1M015A050H TO-220 GP1M015A050H RoHSGP1M015A050FH TO-220F GP1M015A050FH Halogen FreeAbsolute
gp1m016a025xx.pdf
GP1M016A025HGGP1M016A025FGN-channel MOSFETFeaturesBVDSS ID RDS(on) Low gate charge250V 16A
gp1m016a060n.pdf
GP1M016A060N N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 16A
gp1m012a060xx.pdf
GP1M012A060HGP1M012A060FHVDSS = 660 V @TjmaxFeaturesID = 12A Low gate chargeRDS(on) = 0.65 (max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC QualificationDGSDevice Package Marking RemarkGP1M012A060H TO-220 GP1M012A060H RoHSGP1M012A060FH TO-220F GP1M012A060FH Halogen FreeAbsolute
gp1m016a060xx.pdf
GP1M016A060HGP1M016A060F(H)N-channel MOSFETFeaturesBVDSS ID RDS(on) Low gate charge600V 16A
gp1m010a060xx.pdf
GP1M010A060HGP1M010A060FHVDSS = 660 V @TjmaxFeaturesID = 10A Low gate chargeRDS(on) = 0.75 (max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC QualificationDGSDevice Package Marking RemarkGP1M010A060H TO-220 GP1M010A060H RoHSGP1M010A060FH TO-220F GP1M010A060FH Halogen FreeAbsolute
gp1m016a025xg.pdf
GP1M016A025CG GP1M016A025PG N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 250V 16A
gp1m010a080n.pdf
GP1M010A080N VDSS = 880 V @Tjmax Features ID = 10A Low gate charge RDS(on) = 1.05 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant JEDEC Qualification D G S Device Package Marking Remark GP1M010A080N TO-3P GP1M010A080N RoHS Absolute Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDS 900 V
gp1m010a080xx.pdf
GP1M010A080HGP1M010A080FHVDSS = 880 V @TjmaxFeaturesID = 9.5A Low gate chargeRDS(ON) = 1.05 (max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification DGSDevice Package Marking RemarkGP1M010A080H TO-220 GP1M010A080H RoHSGP1M010A080FH TO-220F GP1M010A080FH Halogen FreeAbsolut
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