GP1T036A060B Todos los transistores

 

GP1T036A060B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: GP1T036A060B
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 176 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 16 nS
   Cossⓘ - Capacitancia de salida: 600 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm
   Paquete / Cubierta: TO-247
 

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GP1T036A060B Datasheet (PDF)

 ..1. Size:379K  globalpower
 gp1t036a060b.pdf pdf_icon

GP1T036A060B

PRELIMINARYGP1T036A060BVDS 600 VRDS,on 36mWID 80 A600V SiC MOSFETTM TM TMAmp+ Features Amp+ Benefits Amp+ Applications Low on-resistance High system efficiency Motor drives High speed switching with low capacitance Higher system switching frequency Switch mode power supplies Fast reverse recovery Smaller cooing system Solar inverter

 9.1. Size:420K  globalpower
 gp1t040a120b.pdf pdf_icon

GP1T036A060B

PRELIMINARYGP1T040A120BVDS 1200 VRDS,on 40mWID 62 A1200V SiC MOSFETTM TM TMAmp+ Features Amp+ Benefits Amp+ Applications Low on-resistance High system efficiency Motor drives High speed switching with low capacitance Higher system switching frequency Switch mode power supplies Fast reverse recovery Smaller cooing system Solar inverter

 9.2. Size:421K  globalpower
 gp1t080a120b.pdf pdf_icon

GP1T036A060B

PRELIMINARYGP1T080A120BVDS 1200 VRDS,on 80mWID 32 A1200V SiC MOSFETTM TM TMAmp+ Features Amp+ Benefits Amp+ Applications Low on-resistance High system efficiency Motor drives High speed switching with low capacitance Higher system switching frequency Switch mode power supplies Fast reverse recovery Smaller cooing system Solar inverter

 9.3. Size:420K  globalpower
 gp1t025a120b.pdf pdf_icon

GP1T036A060B

PRELIMINARYGP1T025A120BVDS 1200 VRDS,on 25mWID 100 A1200V SiC MOSFETTM TM TMAmp+ Features Amp+ Benefits Amp+ Applications Low on-resistance High system efficiency Motor drives High speed switching with low capacitance Higher system switching frequency Switch mode power supplies Fast reverse recovery Smaller cooing system Solar inverte

MOSTRAR MÁS

Otros transistores... GP1M016A060XX , GP1M018A020XG , GP1M018A020XX , GP1M020A050N , GP1M020A060M , GP1M020A060N , GP1M023A050N , GP1T025A120B , AON7408 , GP1T040A120B , GP1T072A060B , GP1T080A120B , GP1T160A120B , GP2M002A060XG , GP2M002A060XX , GP2M002A065XG , GP2M002A065XX .

History: 2SK1524 | CJQ9435 | BRCS070N03DP

 

 
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