GSM1012 Todos los transistores

 

GSM1012 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: GSM1012
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.27 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 0.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 20 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.36 Ohm
   Paquete / Cubierta: SOT-523
     - Selección de transistores por parámetros

 

GSM1012 Datasheet (PDF)

 ..1. Size:987K  globaltech semi
 gsm1012.pdf pdf_icon

GSM1012

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1012, N-Channel enhancement mode 20V/0.6A,RDS(ON)=360m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/0.5A,RDS(ON)=420m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/0.4A,RDS(ON)=560m@VGS=1.8V Low Offset (Error) Voltage These devices are particularly suited for low Low-Voltage Operation

 0.1. Size:995K  globaltech semi
 gsm1012e.pdf pdf_icon

GSM1012

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1012E, N-Channel enhancement mode 20V/0.6A,RDS(ON)=360m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/0.5A,RDS(ON)=420m@VGS=2.5V provide excellent RDS(ON), low gate charge. These 20V/0.4A,RDS(ON)=560m@VGS=1.8V devices are particularly suited for low voltage Low Offset (Error) Voltage power

 8.1. Size:621K  globaltech semi
 gsm1013e.pdf pdf_icon

GSM1012

GSM1013E 20V P-Channel Enhancement Mode MOSFET Product Description Features -20V/-0.6A,RDS(ON)=800m@VGS=-4.5V GSM1013E, P-Channel enhancement mode -20V/-0.5A,RDS(ON)=950m@VGS=-2.5V MOSFET, uses Advanced Trench Technology to -20V/-0.4A,RDS(ON)=1250m@VGS=-1.8V provide excellent RDS(ON), low gate charge. Low Offset (Error) Voltage Low-Voltage OperationThese devi

 8.2. Size:3060K  globaltech semi
 gsm1016.pdf pdf_icon

GSM1012

GSM1016 N & P Pair Enhancement Mode MOSFET Product Description Features GSM1016, N & P Pair enhancement mode N-ChannelMOSFET, uses Advanced Trench Technology to 20V/0.6A,RDS(ON)=360m@VGS=4.5V provide excellent RDS(ON), low gate charge. 20V/0.5A,RDS(ON)=420m@VGS=2.5V 20V/0.4A,RDS(ON)=560m@VGS=1.8V These devices are particularly suited for low P-Channelvoltage power ma

MOSTRAR MÁS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SFF70N10Z | MTN50N06E3 | IPI051N15N5 | BUK114-50S | SM3116NAF | CPC3730 | SSFT4004

 

 
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