GSM1012 Datasheet. Specs and Replacement

Type Designator: GSM1012

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.27 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 0.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 20 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm

Package: SOT-523

GSM1012 substitution

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GSM1012 datasheet

 ..1. Size:987K  globaltech semi
 gsm1012.pdf pdf_icon

GSM1012

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1012, N-Channel enhancement mode 20V/0.6A,RDS(ON)=360m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/0.5A,RDS(ON)=420m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/0.4A,RDS(ON)=560m@VGS=1.8V Low Offset (Error) Voltage These devices are particularly suited for low Low-Voltage Operation ... See More ⇒

 0.1. Size:995K  globaltech semi
 gsm1012e.pdf pdf_icon

GSM1012

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1012E, N-Channel enhancement mode 20V/0.6A,RDS(ON)=360m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/0.5A,RDS(ON)=420m @VGS=2.5V provide excellent RDS(ON), low gate charge. These 20V/0.4A,RDS(ON)=560m @VGS=1.8V devices are particularly suited for low voltage Low Offset (Error) Voltage power ... See More ⇒

 8.1. Size:621K  globaltech semi
 gsm1013e.pdf pdf_icon

GSM1012

GSM1013E 20V P-Channel Enhancement Mode MOSFET Product Description Features -20V/-0.6A,RDS(ON)=800m @VGS=-4.5V GSM1013E, P-Channel enhancement mode -20V/-0.5A,RDS(ON)=950m @VGS=-2.5V MOSFET, uses Advanced Trench Technology to -20V/-0.4A,RDS(ON)=1250m @VGS=-1.8V provide excellent RDS(ON), low gate charge. Low Offset (Error) Voltage Low-Voltage Operation These devi... See More ⇒

 8.2. Size:3060K  globaltech semi
 gsm1016.pdf pdf_icon

GSM1012

GSM1016 N & P Pair Enhancement Mode MOSFET Product Description Features GSM1016, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 20V/0.6A,RDS(ON)=360m @VGS=4.5V provide excellent RDS(ON), low gate charge. 20V/0.5A,RDS(ON)=420m @VGS=2.5V 20V/0.4A,RDS(ON)=560m @VGS=1.8V These devices are particularly suited for low P-Channel voltage power ma... See More ⇒

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Detailed specifications: GP2M011A090NG, GP2M012A060X, GP2M012A080NG, GP2M013A050F, GP2M020A050N, GP2M020A050X, GP2M020A060N, GP2M023A050N, 4N60, GSM1012E, GSM1013, GSM1013E, GSM1016, GSM1023, GSM1024, GSM1024E, GSM1026S

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