GSM1026S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: GSM1026S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.35 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 8 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.4 Ohm
   Paquete / Cubierta: SOT-563

Búsqueda de reemplazo de MOSFET GSM1026S

GSM1026S Datasheet (PDF)

..1. Size:1054K globaltech semi
gsm1026s.pdf

GSM1026S 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM1026S, N-Channel enhancement mode 60V/0.5A,RDS(ON)=2.4@VGS=10V MOSFET, uses Advanced Trench 60V/0.2A,RDS(ON)=3.0@VGS=4.5V Technology to provide excellent RDS(ON), low Super high density cell design for extremely gate charge. low RDS(ON) These devices are particularly suited for low Exception

8.1. Size:972K globaltech semi
gsm1023.pdf

GSM1023 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM1023, P-Channel enhancement mode -20V/-0.45A,RDS(ON)=620m@VGS=-4.5V MOSFET, uses Advanced Trench -20V/-0.35A,RDS(ON)=860m@VGS=-2.5V Technology to provide excellent RDS(ON), low -20V/-0.25A,RDS(ON)=1450m@VGS=-1.8V gate charge. Low Offset (Error) Voltage These devices are particula

8.2. Size:937K globaltech semi
gsm1024e.pdf

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1024E, N-Channel enhancement mode 20V/0.6A,RDS(ON)=360m@VGS=4.5V MOSFET, uses Advanced Trench 20V/0.5A,RDS(ON)=420m@VGS=2.5V Technology to provide excellent RDS(ON), low 20V/0.4A,RDS(ON)=560m@VGS=1.8V gate charge. Low Offset (Error) Voltage These devices are particularly suited for low

8.3. Size:940K globaltech semi
gsm1024.pdf

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1024, N-Channel enhancement mode 20V/0.6A,RDS(ON)=360m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/0.5A,RDS(ON)=420m@VGS=2.5V provide excellent RDS(ON), low gate charge. These 20V/0.4A,RDS(ON)=560m@VGS=1.8V devices are particularly suited for low voltage Low Offset (Error) Voltag

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