GSM1026S Datasheet. Specs and Replacement

Type Designator: GSM1026S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.35 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 8 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm

Package: SOT-563

GSM1026S substitution

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GSM1026S datasheet

 ..1. Size:1054K  globaltech semi
 gsm1026s.pdf pdf_icon

GSM1026S

GSM1026S 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM1026S, N-Channel enhancement mode 60V/0.5A,RDS(ON)=2.4 @VGS=10V MOSFET, uses Advanced Trench 60V/0.2A,RDS(ON)=3.0 @VGS=4.5V Technology to provide excellent RDS(ON), low Super high density cell design for extremely gate charge. low RDS(ON) These devices are particularly suited for low Exception... See More ⇒

 8.1. Size:972K  globaltech semi
 gsm1023.pdf pdf_icon

GSM1026S

GSM1023 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM1023, P-Channel enhancement mode -20V/-0.45A,RDS(ON)=620m @VGS=-4.5V MOSFET, uses Advanced Trench -20V/-0.35A,RDS(ON)=860m @VGS=-2.5V Technology to provide excellent RDS(ON), low -20V/-0.25A,RDS(ON)=1450m @VGS=-1.8V gate charge. Low Offset (Error) Voltage These devices are particula... See More ⇒

 8.2. Size:937K  globaltech semi
 gsm1024e.pdf pdf_icon

GSM1026S

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1024E, N-Channel enhancement mode 20V/0.6A,RDS(ON)=360m @VGS=4.5V MOSFET, uses Advanced Trench 20V/0.5A,RDS(ON)=420m @VGS=2.5V Technology to provide excellent RDS(ON), low 20V/0.4A,RDS(ON)=560m @VGS=1.8V gate charge. Low Offset (Error) Voltage These devices are particularly suited for low ... See More ⇒

 8.3. Size:940K  globaltech semi
 gsm1024.pdf pdf_icon

GSM1026S

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1024, N-Channel enhancement mode 20V/0.6A,RDS(ON)=360m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/0.5A,RDS(ON)=420m @VGS=2.5V provide excellent RDS(ON), low gate charge. These 20V/0.4A,RDS(ON)=560m @VGS=1.8V devices are particularly suited for low voltage Low Offset (Error) Voltag... See More ⇒

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Detailed specifications: GSM1012, GSM1012E, GSM1013, GSM1013E, GSM1016, GSM1023, GSM1024, GSM1024E, AO3407, GSM1032, GSM1034, GSM1072, GSM1072E, GSM1073, GSM1073E, GSM1303, GSM1304

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