GSM1032
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: GSM1032
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.27
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 30
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12
V
|Id|ⓘ - Corriente continua de drenaje: 0.7
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 25
nS
Cossⓘ - Capacitancia
de salida: 25
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.44
Ohm
Paquete / Cubierta:
SOT-523
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GSM1032
Datasheet (PDF)
..1. Size:506K globaltech semi
gsm1032.pdf 
30V N-Channel Enhancement Mode MOSFET Product Description Features GSM1032, N-Channel enhancement mode 30V/0.6A,RDS(ON)=440m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 30V/0.5A,RDS(ON)=500m@VGS=2.5V provide excellent RDS(ON), low gate charge. 30V/0.4A,RDS(ON)=750m@VGS=1.8V These devices are particularly suited for low Low Offset (Error) Voltage voltage
8.1. Size:565K globaltech semi
gsm1034.pdf
GSM1034 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM1034, N-Channel enhancement mode 30V/0.6A,RDS(ON)=440m@VGS=4.5V MOSFET, uses Advanced Trench 30V/0.5A,RDS(ON)=500m@VGS=2.5V Technology to provide excellent RDS(ON), low 30V/0.4A,RDS(ON)=720m@VGS=1.8V gate charge. Low Offset (Error) Voltage These devices are particularly suited for low Low-
9.1. Size:972K globaltech semi
gsm1023.pdf
GSM1023 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM1023, P-Channel enhancement mode -20V/-0.45A,RDS(ON)=620m@VGS=-4.5V MOSFET, uses Advanced Trench -20V/-0.35A,RDS(ON)=860m@VGS=-2.5V Technology to provide excellent RDS(ON), low -20V/-0.25A,RDS(ON)=1450m@VGS=-1.8V gate charge. Low Offset (Error) Voltage These devices are particula
9.2. Size:995K globaltech semi
gsm1012e.pdf
20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1012E, N-Channel enhancement mode 20V/0.6A,RDS(ON)=360m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/0.5A,RDS(ON)=420m@VGS=2.5V provide excellent RDS(ON), low gate charge. These 20V/0.4A,RDS(ON)=560m@VGS=1.8V devices are particularly suited for low voltage Low Offset (Error) Voltage power
9.3. Size:1003K globaltech semi
gsm1072.pdf
GSM1072 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1072, N-Channel enhancement mode 20V/0.8A,RDS(ON)=360m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/0.7A,RDS(ON)=420m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/0.6A,RDS(ON)=560m@VGS=1.8V Low Offset (Error) Voltage These devices are particularly suited for low
9.4. Size:1054K globaltech semi
gsm1026s.pdf
GSM1026S 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM1026S, N-Channel enhancement mode 60V/0.5A,RDS(ON)=2.4@VGS=10V MOSFET, uses Advanced Trench 60V/0.2A,RDS(ON)=3.0@VGS=4.5V Technology to provide excellent RDS(ON), low Super high density cell design for extremely gate charge. low RDS(ON) These devices are particularly suited for low Exception
9.5. Size:621K globaltech semi
gsm1013e.pdf
GSM1013E 20V P-Channel Enhancement Mode MOSFET Product Description Features -20V/-0.6A,RDS(ON)=800m@VGS=-4.5V GSM1013E, P-Channel enhancement mode -20V/-0.5A,RDS(ON)=950m@VGS=-2.5V MOSFET, uses Advanced Trench Technology to -20V/-0.4A,RDS(ON)=1250m@VGS=-1.8V provide excellent RDS(ON), low gate charge. Low Offset (Error) Voltage Low-Voltage OperationThese devi
9.6. Size:625K globaltech semi
gsm1073e.pdf
GSM1073E 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM1073E, P-Channel enhancement mode -20V/-0.6A,RDS(ON)=800m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-0.5A,RDS(ON)=950m@VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-0.4A,RDS(ON)=1250m@VGS=-1.8V Low Offset (Error) Voltage These devices are particularly sui
9.7. Size:987K globaltech semi
gsm1012.pdf
20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1012, N-Channel enhancement mode 20V/0.6A,RDS(ON)=360m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/0.5A,RDS(ON)=420m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/0.4A,RDS(ON)=560m@VGS=1.8V Low Offset (Error) Voltage These devices are particularly suited for low Low-Voltage Operation
9.8. Size:957K globaltech semi
gsm1073.pdf
GSM1073 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM1073, P-Channel enhancement mode -20V/-0.45A,RDS(ON)=620m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-0.35A,RDS(ON)=860m@VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-0.25A,RDS(ON)=1450m@VGS=-1.8V Low Offset (Error) Voltage These devices are part
9.9. Size:937K globaltech semi
gsm1024e.pdf
20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1024E, N-Channel enhancement mode 20V/0.6A,RDS(ON)=360m@VGS=4.5V MOSFET, uses Advanced Trench 20V/0.5A,RDS(ON)=420m@VGS=2.5V Technology to provide excellent RDS(ON), low 20V/0.4A,RDS(ON)=560m@VGS=1.8V gate charge. Low Offset (Error) Voltage These devices are particularly suited for low
9.10. Size:3060K globaltech semi
gsm1016.pdf
GSM1016 N & P Pair Enhancement Mode MOSFET Product Description Features GSM1016, N & P Pair enhancement mode N-ChannelMOSFET, uses Advanced Trench Technology to 20V/0.6A,RDS(ON)=360m@VGS=4.5V provide excellent RDS(ON), low gate charge. 20V/0.5A,RDS(ON)=420m@VGS=2.5V 20V/0.4A,RDS(ON)=560m@VGS=1.8V These devices are particularly suited for low P-Channelvoltage power ma
9.11. Size:515K globaltech semi
gsm1072e.pdf
GSM1072E 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1072E, N-Channel enhancement mode 20V/0.8A,RDS(ON)=360m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/0.7A,RDS(ON)=420m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/0.6A,RDS(ON)=560m@VGS=1.8V Low Offset (Error) Voltage These devices are particularly suited for lo
9.12. Size:940K globaltech semi
gsm1024.pdf
20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1024, N-Channel enhancement mode 20V/0.6A,RDS(ON)=360m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/0.5A,RDS(ON)=420m@VGS=2.5V provide excellent RDS(ON), low gate charge. These 20V/0.4A,RDS(ON)=560m@VGS=1.8V devices are particularly suited for low voltage Low Offset (Error) Voltag
9.13. Size:1012K globaltech semi
gsm1013.pdf
20V P-Channel Enhancement Mode MOSFET Product Description Features GSM1013, P-Channel enhancement mode -20V/-0.6A,RDS(ON)=620m@VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-0.5A,RDS(ON)=860m@VGS=-2.5V to provide excellent RDS(ON), low gate charge. -20V/-0.4A,RDS(ON)=1450m@VGS=-1.8V Low Offset (Error) Voltage These devices are particularly suited for low Low-V
Otros transistores... GSM1012E
, GSM1013
, GSM1013E
, GSM1016
, GSM1023
, GSM1024
, GSM1024E
, GSM1026S
, 75N75
, GSM1034
, GSM1072
, GSM1072E
, GSM1073
, GSM1073E
, GSM1303
, GSM1304
, GSM1304E
.
History: STW15NK50Z
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