GSM1032 datasheet, подбор замены

 ..1. Size:506K  globaltech semi
 gsm1032.pdf 

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM1032, N-Channel enhancement mode 30V/0.6A,RDS(ON)=440m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 30V/0.5A,RDS(ON)=500m @VGS=2.5V provide excellent RDS(ON), low gate charge. 30V/0.4A,RDS(ON)=750m @VGS=1.8V These devices are particularly suited for low Low Offset (Error) Voltage voltage

 8.1. Size:565K  globaltech semi
 gsm1034.pdf 

GSM1034 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM1034, N-Channel enhancement mode 30V/0.6A,RDS(ON)=440m @VGS=4.5V MOSFET, uses Advanced Trench 30V/0.5A,RDS(ON)=500m @VGS=2.5V Technology to provide excellent RDS(ON), low 30V/0.4A,RDS(ON)=720m @VGS=1.8V gate charge. Low Offset (Error) Voltage These devices are particularly suited for low Low-

 9.1. Size:972K  globaltech semi
 gsm1023.pdf 

GSM1023 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM1023, P-Channel enhancement mode -20V/-0.45A,RDS(ON)=620m @VGS=-4.5V MOSFET, uses Advanced Trench -20V/-0.35A,RDS(ON)=860m @VGS=-2.5V Technology to provide excellent RDS(ON), low -20V/-0.25A,RDS(ON)=1450m @VGS=-1.8V gate charge. Low Offset (Error) Voltage These devices are particula

 9.2. Size:995K  globaltech semi
 gsm1012e.pdf 

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1012E, N-Channel enhancement mode 20V/0.6A,RDS(ON)=360m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/0.5A,RDS(ON)=420m @VGS=2.5V provide excellent RDS(ON), low gate charge. These 20V/0.4A,RDS(ON)=560m @VGS=1.8V devices are particularly suited for low voltage Low Offset (Error) Voltage power

 9.3. Size:1003K  globaltech semi
 gsm1072.pdf 

GSM1072 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1072, N-Channel enhancement mode 20V/0.8A,RDS(ON)=360m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/0.7A,RDS(ON)=420m @VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/0.6A,RDS(ON)=560m @VGS=1.8V Low Offset (Error) Voltage These devices are particularly suited for low

 9.4. Size:1054K  globaltech semi
 gsm1026s.pdf 

GSM1026S 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM1026S, N-Channel enhancement mode 60V/0.5A,RDS(ON)=2.4 @VGS=10V MOSFET, uses Advanced Trench 60V/0.2A,RDS(ON)=3.0 @VGS=4.5V Technology to provide excellent RDS(ON), low Super high density cell design for extremely gate charge. low RDS(ON) These devices are particularly suited for low Exception

 9.5. Size:621K  globaltech semi
 gsm1013e.pdf 

GSM1013E 20V P-Channel Enhancement Mode MOSFET Product Description Features -20V/-0.6A,RDS(ON)=800m @VGS=-4.5V GSM1013E, P-Channel enhancement mode -20V/-0.5A,RDS(ON)=950m @VGS=-2.5V MOSFET, uses Advanced Trench Technology to -20V/-0.4A,RDS(ON)=1250m @VGS=-1.8V provide excellent RDS(ON), low gate charge. Low Offset (Error) Voltage Low-Voltage Operation These devi

 9.6. Size:625K  globaltech semi
 gsm1073e.pdf 

GSM1073E 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM1073E, P-Channel enhancement mode -20V/-0.6A,RDS(ON)=800m @VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-0.5A,RDS(ON)=950m @VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-0.4A,RDS(ON)=1250m @VGS=-1.8V Low Offset (Error) Voltage These devices are particularly sui

 9.7. Size:987K  globaltech semi
 gsm1012.pdf 

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1012, N-Channel enhancement mode 20V/0.6A,RDS(ON)=360m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/0.5A,RDS(ON)=420m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/0.4A,RDS(ON)=560m@VGS=1.8V Low Offset (Error) Voltage These devices are particularly suited for low Low-Voltage Operation

 9.8. Size:957K  globaltech semi
 gsm1073.pdf 

GSM1073 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM1073, P-Channel enhancement mode -20V/-0.45A,RDS(ON)=620m @VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-0.35A,RDS(ON)=860m @VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-0.25A,RDS(ON)=1450m @VGS=-1.8V Low Offset (Error) Voltage These devices are part

 9.9. Size:937K  globaltech semi
 gsm1024e.pdf 

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1024E, N-Channel enhancement mode 20V/0.6A,RDS(ON)=360m @VGS=4.5V MOSFET, uses Advanced Trench 20V/0.5A,RDS(ON)=420m @VGS=2.5V Technology to provide excellent RDS(ON), low 20V/0.4A,RDS(ON)=560m @VGS=1.8V gate charge. Low Offset (Error) Voltage These devices are particularly suited for low

 9.10. Size:3060K  globaltech semi
 gsm1016.pdf 

GSM1016 N & P Pair Enhancement Mode MOSFET Product Description Features GSM1016, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 20V/0.6A,RDS(ON)=360m @VGS=4.5V provide excellent RDS(ON), low gate charge. 20V/0.5A,RDS(ON)=420m @VGS=2.5V 20V/0.4A,RDS(ON)=560m @VGS=1.8V These devices are particularly suited for low P-Channel voltage power ma

 9.11. Size:515K  globaltech semi
 gsm1072e.pdf 

GSM1072E 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1072E, N-Channel enhancement mode 20V/0.8A,RDS(ON)=360m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/0.7A,RDS(ON)=420m @VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/0.6A,RDS(ON)=560m @VGS=1.8V Low Offset (Error) Voltage These devices are particularly suited for lo

 9.12. Size:940K  globaltech semi
 gsm1024.pdf 

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1024, N-Channel enhancement mode 20V/0.6A,RDS(ON)=360m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/0.5A,RDS(ON)=420m @VGS=2.5V provide excellent RDS(ON), low gate charge. These 20V/0.4A,RDS(ON)=560m @VGS=1.8V devices are particularly suited for low voltage Low Offset (Error) Voltag

 9.13. Size:1012K  globaltech semi
 gsm1013.pdf 

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM1013, P-Channel enhancement mode -20V/-0.6A,RDS(ON)=620m @VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-0.5A,RDS(ON)=860m @VGS=-2.5V to provide excellent RDS(ON), low gate charge. -20V/-0.4A,RDS(ON)=1450m @VGS=-1.8V Low Offset (Error) Voltage These devices are particularly suited for low Low-V