GSM2301 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

GSM2301 Datasheet (PDF)

..1. Size:477K globaltech semi
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20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2301, P-Channel enhancement mode -20V/-3.0A,RDS(ON)=105m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.4A,RDS(ON)=155m@VGS=-2.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) volta

0.1. Size:877K globaltech semi
gsm2301as.pdf pdf_icon

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2301AS, P-Channel enhancement mode -20V/-2.4A,RDS(ON)=125m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.0A,RDS(ON)=170m@VGS=-2.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low voltage

0.2. Size:827K globaltech semi
gsm2301s.pdf pdf_icon

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2301S, P-Channel enhancement mode -20V/-2.8A,RDS(ON)=120m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.0A,RDS(ON)=170m@VGS=-2.5V provide excellent RDS(ON), low gate charge. Super high density cell design for These devices are particularly suited for low extremely low RDS (ON) volt

0.3. Size:816K globaltech semi
gsm2301a.pdf pdf_icon

20V P-Channel Enhancement Mode MOSFET Product Description Features -20V/-2.6A,RDS(ON)=120m@VGS=-4.5V GSM2301A, P-Channel enhancement mode -20V/-2.2A,RDS(ON)=170m@VGS=-2.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) These devices are particularly suited for low

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