GSM2301 PDF and Equivalents Search

 

GSM2301 PDF Specs and Replacement


   Type Designator: GSM2301
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 223 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm
   Package: SOT-23-3L
 

 GSM2301 substitution

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GSM2301 PDF Specs

 ..1. Size:477K  globaltech semi
 gsm2301.pdf pdf_icon

GSM2301

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2301, P-Channel enhancement mode -20V/-3.0A,RDS(ON)=105m @VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.4A,RDS(ON)=155m @VGS=-2.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) volta... See More ⇒

 0.1. Size:877K  globaltech semi
 gsm2301as.pdf pdf_icon

GSM2301

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2301AS, P-Channel enhancement mode -20V/-2.4A,RDS(ON)=125m @VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.0A,RDS(ON)=170m @VGS=-2.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low voltage ... See More ⇒

 0.2. Size:827K  globaltech semi
 gsm2301s.pdf pdf_icon

GSM2301

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2301S, P-Channel enhancement mode -20V/-2.8A,RDS(ON)=120m @VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.0A,RDS(ON)=170m @VGS=-2.5V provide excellent RDS(ON), low gate charge. Super high density cell design for These devices are particularly suited for low extremely low RDS (ON) volt... See More ⇒

 0.3. Size:816K  globaltech semi
 gsm2301a.pdf pdf_icon

GSM2301

20V P-Channel Enhancement Mode MOSFET Product Description Features -20V/-2.6A,RDS(ON)=120m @VGS=-4.5V GSM2301A, P-Channel enhancement mode -20V/-2.2A,RDS(ON)=170m @VGS=-2.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) These devices are particularly suited for low... See More ⇒

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Detailed specifications: GSM1413 , GSM1433 , GSM1443 , GSM1563 , GSM1810 , GSM1912 , GSM1913 , GSM2014 , IRF9640 , GSM2301A , GSM2301AS , GSM2301S , GSM2302AS , GSM2302S , GSM2303 , GSM2303A , GSM2304 .

Keywords - GSM2301 MOSFET specs

 GSM2301 cross reference
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 GSM2301 pdf lookup
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 GSM2301 replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 
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