All MOSFET. GSM2301 Datasheet

 

GSM2301 MOSFET. Datasheet pdf. Equivalent

Type Designator: GSM2301

Marking Code: 01*

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 1.25 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 12 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V

Maximum Drain Current |Id|: 3 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 5.8 nC

Rise Time (tr): 36 nS

Drain-Source Capacitance (Cd): 223 pF

Maximum Drain-Source On-State Resistance (Rds): 0.105 Ohm

Package: SOT-23-3L

GSM2301 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

GSM2301 Datasheet (PDF)

1.1. gsm2301.pdf Size:477K _update-mosfet

GSM2301 GSM2301

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2301, P-Channel enhancement mode  -20V/-3.0A,RDS(ON)=105mΩ@VGS=-4.5V MOSFET, uses Advanced Trench Technology to  -20V/-2.4A,RDS(ON)=155mΩ@VGS=-2.5V provide excellent RDS(ON), low gate charge.  Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) volta

1.2. gsm2301as.pdf Size:877K _update-mosfet

GSM2301 GSM2301

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2301AS, P-Channel enhancement mode -20V/-2.4A,RDS(ON)=125mΩ@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.0A,RDS(ON)=170mΩ@VGS=-2.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low voltage

 1.3. gsm2301a.pdf Size:816K _update-mosfet

GSM2301 GSM2301

20V P-Channel Enhancement Mode MOSFET Product Description Features  -20V/-2.6A,RDS(ON)=120mΩ@VGS=-4.5V GSM2301A, P-Channel enhancement mode  -20V/-2.2A,RDS(ON)=170mΩ@VGS=-2.5V MOSFET, uses Advanced Trench Technology to  Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) These devices are particularly suited for low

1.4. gsm2301s.pdf Size:827K _update-mosfet

GSM2301 GSM2301

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2301S, P-Channel enhancement mode  -20V/-2.8A,RDS(ON)=120mΩ@VGS=-4.5V MOSFET, uses Advanced Trench Technology to  -20V/-2.0A,RDS(ON)=170mΩ@VGS=-2.5V provide excellent RDS(ON), low gate charge.  Super high density cell design for These devices are particularly suited for low extremely low RDS (ON) volt

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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