GSM2301S Todos los transistores

 

GSM2301S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: GSM2301S
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 36 nS
   Cossⓘ - Capacitancia de salida: 223 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.12 Ohm
   Paquete / Cubierta: SOT-23-3L
 

 Búsqueda de reemplazo de GSM2301S MOSFET

   - Selección ⓘ de transistores por parámetros

 

GSM2301S Datasheet (PDF)

 ..1. Size:827K  globaltech semi
 gsm2301s.pdf pdf_icon

GSM2301S

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2301S, P-Channel enhancement mode -20V/-2.8A,RDS(ON)=120m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.0A,RDS(ON)=170m@VGS=-2.5V provide excellent RDS(ON), low gate charge. Super high density cell design for These devices are particularly suited for low extremely low RDS (ON) volt

 7.1. Size:877K  globaltech semi
 gsm2301as.pdf pdf_icon

GSM2301S

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2301AS, P-Channel enhancement mode -20V/-2.4A,RDS(ON)=125m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.0A,RDS(ON)=170m@VGS=-2.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low voltage

 7.2. Size:816K  globaltech semi
 gsm2301a.pdf pdf_icon

GSM2301S

20V P-Channel Enhancement Mode MOSFET Product Description Features -20V/-2.6A,RDS(ON)=120m@VGS=-4.5V GSM2301A, P-Channel enhancement mode -20V/-2.2A,RDS(ON)=170m@VGS=-2.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) These devices are particularly suited for low

 7.3. Size:477K  globaltech semi
 gsm2301.pdf pdf_icon

GSM2301S

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2301, P-Channel enhancement mode -20V/-3.0A,RDS(ON)=105m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.4A,RDS(ON)=155m@VGS=-2.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) volta

MOSTRAR MÁS

Otros transistores... GSM1563 , GSM1810 , GSM1912 , GSM1913 , GSM2014 , GSM2301 , GSM2301A , GSM2301AS , IRF9640 , GSM2302AS , GSM2302S , GSM2303 , GSM2303A , GSM2304 , GSM2304A , GSM2304AS , GSM2304S .

History: IPP100N12S3-05 | TMP10N80 | FDMC86259P | AP13N50W | NCEP033N10M | IRF7313PBF

 

 
Back to Top

 


 
.