GSM2304 Todos los transistores

 

GSM2304 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: GSM2304

Código: 04*

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.25 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 3.6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2.2 V

Carga de compuerta (Qg): 2 nC

Tiempo de elevación (tr): 45 nS

Conductancia de drenaje-sustrato (Cd): 50 pF

Resistencia drenaje-fuente RDS(on): 0.078 Ohm

Empaquetado / Estuche: SOT-23-3L

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GSM2304 Datasheet (PDF)

1.1. gsm2304s.pdf Size:754K _update-mosfet

GSM2304
GSM2304

GSM2304S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM2304S, N-Channel enhancement mode  30V/3.6A,RDS(ON)=60mΩ@VGS=10V MOSFET, uses Advanced Trench Technology to  30V/2.5A,RDS(ON)=85mΩ@VGS=4.5V provide excellent RDS(ON) ,low gate charge.  Super high density cell design for extremely These devices are particularly suited for low low RDS (O

1.2. gsm2304a.pdf Size:758K _update-mosfet

GSM2304
GSM2304

GSM2304A 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM2304A, N-Channel enhancement mode 30V/2.6A,RDS(ON)=82mΩ@VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.0A,RDS(ON)=108mΩ@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low Exce

 1.3. gsm2304as.pdf Size:747K _update-mosfet

GSM2304
GSM2304

GSM2304AS 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM2304AS, N-Channel enhancement mode 30V/2.4A,RDS(ON)=65mΩ@VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.0A,RDS(ON)=90mΩ@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low SOT-2

1.4. gsm2304.pdf Size:963K _update-mosfet

GSM2304
GSM2304

GSM2304 GSM2304 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM2304, N-Channel enhancement mode 30V/3.6A,RDS(ON)=78mΩ@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/2.8A,RDS(ON)=105mΩ@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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