All MOSFET. GSM2304 Datasheet

 

GSM2304 Datasheet and Replacement


   Type Designator: GSM2304
   Marking Code: 04*
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id| ⓘ - Maximum Drain Current: 3.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 2 nC
   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.078 Ohm
   Package: SOT-23-3L
 

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GSM2304 Datasheet (PDF)

 ..1. Size:963K  globaltech semi
 gsm2304.pdf pdf_icon

GSM2304

GSM2304 GSM230430V N-Channel Enhancement Mode MOSFET Product Description Features GSM2304, N-Channel enhancement mode 30V/3.6A,RDS(ON)=78m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/2.8A,RDS(ON)=105m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 0.1. Size:758K  globaltech semi
 gsm2304a.pdf pdf_icon

GSM2304

GSM2304A 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM2304A, N-Channel enhancement mode 30V/2.6A,RDS(ON)=82m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.0A,RDS(ON)=108m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low Exce

 0.2. Size:747K  globaltech semi
 gsm2304as.pdf pdf_icon

GSM2304

GSM2304AS 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM2304AS, N-Channel enhancement mode 30V/2.4A,RDS(ON)=65m@VGS=10VMOSFET, uses Advanced Trench Technology 30V/2.0A,RDS(ON)=90m@VGS=4.5Vto provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low SOT-2

 0.3. Size:754K  globaltech semi
 gsm2304s.pdf pdf_icon

GSM2304

GSM2304S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM2304S, N-Channel enhancement mode 30V/3.6A,RDS(ON)=60m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/2.5A,RDS(ON)=85m@VGS=4.5V provide excellent RDS(ON) ,low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (O

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Datasheet: GSM2301 , GSM2301A , GSM2301AS , GSM2301S , GSM2302AS , GSM2302S , GSM2303 , GSM2303A , AO3407 , GSM2304A , GSM2304AS , GSM2304S , GSM2306A , GSM2306AE , GSM2307A , GSM2308 , GSM2308A .

History: AP95T10GP-HF | UPA2793GR | AP9466GH | AP9465GEM | JCS2N70MFH | UPA2815T1S | AP9930GM-HF

Keywords - GSM2304 MOSFET datasheet

 GSM2304 cross reference
 GSM2304 equivalent finder
 GSM2304 lookup
 GSM2304 substitution
 GSM2304 replacement

 

 
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