GSM2337A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: GSM2337A
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.25 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 1.2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 20 nS
Cossⓘ - Capacitancia de salida: 12 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.89 Ohm
Paquete / Cubierta: SOT-23
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GSM2337A Datasheet (PDF)
gsm2337a.pdf
GSM2337A GSM2337A 30V P-Channel Enhancement Mode MOSFET Product Description Features -30V/-1.2A,RDS(ON)=890m@VGS=-10V GSM2337A, P-Channel enhancement mode -30V/-0.6A,RDS(ON)=1450m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) Exceptional on-resi
gsm2330.pdf
GSM2330 90V N-Channel Enhancement Mode MOSFET Product Description Features GSM2330, N-Channel enhancement mode 90V/2.8A,RDS(ON)=190m@VGS=10V MOSFET, uses Advanced Trench Technology 90V/2.0A,RDS(ON)=200m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low
gsm2336a.pdf
GSM2336A 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM2336A, N-Channel enhancement mode 30V/1.8A,RDS(ON)=380m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 30V/1.5A,RDS(ON)=480m@VGS=2.5V provide excellent RDS(ON), low gate charge. 30V/1.2A,RDS(ON)=900m@VGS=1.8V Super high density cell design for extremely These devices are p
gsm2330a.pdf
GSM2330A 90V N-Channel Enhancement Mode MOSFET Product Description Features GSM2330A, N-Channel enhancement mode 90V/2.8A,RDS(ON)=200m@VGS=10V MOSFET, uses Advanced Trench Technology 90V/2.0A,RDS(ON)=210m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low
Otros transistores... GSM2323 , GSM2323A , GSM2324 , GSM2324A , GSM2330 , GSM2330A , GSM2333A , GSM2336A , IRFB4115 , GSM2341 , GSM2343A , GSM2354 , GSM2367AS , GSM2367S , GSM2376 , GSM2379 , GSM2519 .
History: 2SK2965
History: 2SK2965
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