GSM2367AS Datasheet. Equivalente

 ..1. Size:842K  globaltech semi
 gsm2367as.pdf

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2367AS, P-Channel enhancement mode -20V/-2.8A,RDS(ON)=80m @VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.5A,RDS(ON)=98m @VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-2.2A,RDS(ON)=130m @VGS=-1.8V These devices are particularly suited for low Super high density cell

 7.1. Size:850K  globaltech semi
 gsm2367s.pdf

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2367S, P-Channel enhancement mode -20V/-3.0A,RDS(ON)=65m @VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.4A,RDS(ON)=80m @VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-2.0A,RDS(ON)=105m @VGS=-1.8V These devices are particularly suited for low Super high density cell d

 9.1. Size:944K  globaltech semi
 gsm2317.pdf

GSM2317 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM2317, P-Channel enhancement mode -40V/-3.6A,RDS(ON)=52m @VGS=-10V MOSFET, uses Advanced Trench Technology to -40V/-3.2A,RDS(ON)=67m @VGS=-4.5V provide excellent RDS(ON) ,low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited f

 9.2. Size:951K  globaltech semi
 gsm2319as.pdf

GSM2319AS 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM2319AS, P-Channel enhancement mode -40V/-3.0A,RDS(ON)=90m @VGS=-10V MOSFET, uses Advanced Trench -40V/-2.4A,RDS(ON)=120m @VGS=-4.5V Technology to provide excellent RDS(ON), low Super high density cell design for gate charge. extremely low RDS (ON) Exceptional on-resistance and Thes

 9.3. Size:416K  globaltech semi
 gsm2311.pdf

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2311, P-Channel enhancement mode -20V/-4.0A,RDS(ON)=56m @VGS=4.5V MOSFET, uses Advanced Trench -20V/-3.2A,RDS(ON)=70m @VGS=2.5V Technology to provide excellent RDS(ON), low -20V/-2.8A,RDS(ON)=96m @VGS=1.8V gate charge. Super high density cell design for These devices are particularly suited f

 9.4. Size:832K  globaltech semi
 gsm2330.pdf

 9.5. Size:892K  globaltech semi
 gsm2336a.pdf

GSM2336A 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM2336A, N-Channel enhancement mode 30V/1.8A,RDS(ON)=380m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 30V/1.5A,RDS(ON)=480m @VGS=2.5V provide excellent RDS(ON), low gate charge. 30V/1.2A,RDS(ON)=900m @VGS=1.8V Super high density cell design for extremely These devices are p

 9.6. Size:832K  globaltech semi
 gsm2324.pdf

GSM2324 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM2324, N-Channel enhancement mode 100V/2.3A,RDS(ON)=285m @VGS=10V MOSFET, uses Advanced Trench Technology 100V/1.8A,RDS(ON)=295m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for lo

 9.7. Size:914K  globaltech semi
 gsm2303a.pdf

GSM2303A GSM2303A 30V P-Channel Enhancement Mode MOSFET Product Description Features -30V/-2.8A,RDS(ON)=145m @VGS=-10.0V GSM2303A, P-Channel enhancement mode -30V/-2.4A,RDS(ON)=180m @VGS=-4.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) Exceptional on-res

 9.8. Size:1173K  globaltech semi
 gsm2323.pdf

GSM2323 GSM2323 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM2323, P-Channel enhancement mode -30V/-3.6A,RDS(ON)=150m @VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-3.2A,RDS(ON)=235m @VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited fo

 9.9. Size:877K  globaltech semi
 gsm2301as.pdf

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2301AS, P-Channel enhancement mode -20V/-2.4A,RDS(ON)=125m @VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.0A,RDS(ON)=170m @VGS=-2.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low voltage

 9.10. Size:758K  globaltech semi
 gsm2304a.pdf

GSM2304A 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM2304A, N-Channel enhancement mode 30V/2.6A,RDS(ON)=82m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.0A,RDS(ON)=108m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low Exce

 9.11. Size:1242K  globaltech semi
 gsm2302as.pdf

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM2302AS, N-Channel enhancement mode 20V/2.4A,RDS(ON)=90m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/2.0A,RDS(ON)=110m @VGS=2.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low Exceptional on-

 9.12. Size:832K  globaltech semi
 gsm2330a.pdf

GSM2330A 90V N-Channel Enhancement Mode MOSFET Product Description Features GSM2330A, N-Channel enhancement mode 90V/2.8A,RDS(ON)=200m @VGS=10V MOSFET, uses Advanced Trench Technology 90V/2.0A,RDS(ON)=210m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 9.13. Size:903K  globaltech semi
 gsm2333a.pdf

GSM2333A GSM2333A 25V P-Channel Enhancement Mode MOSFET Product Description Features -25V/-2.8A,RDS(ON)=145m @VGS=-10V GSM2333A, P-Channel enhancement mode -25V/-2.4A,RDS(ON)=180m @VGS=-4.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) Exceptional on-resis

 9.14. Size:827K  globaltech semi
 gsm2301s.pdf

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2301S, P-Channel enhancement mode -20V/-2.8A,RDS(ON)=120m @VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.0A,RDS(ON)=170m @VGS=-2.5V provide excellent RDS(ON), low gate charge. Super high density cell design for These devices are particularly suited for low extremely low RDS (ON) volt

 9.15. Size:946K  globaltech semi
 gsm2341.pdf

P-Channel Enhancement Mode MOSFET Product Description Features GSM2341, P-Channel enhancement mode -20V/-3.0A,RDS(ON)= 50m @VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.6A,RDS(ON)= 64m @VGS=-2.5V to provide excellent RDS(ON), low gate charge. -20V/-2.0A,RDS(ON)= 80m @VGS=-1.8V Super high density cell design for extremely These devices are particularly suited

 9.16. Size:881K  globaltech semi
 gsm2309a.pdf

GSM2309A 60V P-Channel Enhancement Mode MOSFET Product Description Features GSM2309A, P-Channel enhancement mode -60V/-1.8A,RDS(ON)=305m @VGS=-10V MOSFET, uses Advanced Trench -60V/-1.6A,RDS(ON)=320m @VGS=-4.5V Technology to provide excellent RDS(ON), low Super high density cell design for gate charge. extremely low RDS (ON) Exceptional on-resistance and maxim

 9.17. Size:881K  globaltech semi
 gsm2309.pdf

GSM2309 60V P-Channel Enhancement Mode MOSFET Product Description Features GSM2309, P-Channel enhancement mode -60V/-1.8A,RDS(ON)=305m @VGS=-10V MOSFET, uses Advanced Trench -60V/-1.4A,RDS(ON)=320m @VGS=-4.5V Technology to provide excellent RDS(ON), low Super high density cell design for gate charge. extremely low RDS (ON) Exceptional on-resistance and maximum

 9.18. Size:936K  globaltech semi
 gsm2354.pdf

GSM2354 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM2354, N-Channel enhancement mode 100V/3.2A,RDS(ON)=145m @VGS=10V MOSFET, uses Advanced Trench Technology to 100V/2.6A,RDS(ON)=160m @VGS=4.5V provide excellent RDS(ON) ,low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 9.19. Size:422K  globaltech semi
 gsm2318a.pdf

GSM2318A 40V N-Channel Enhancement Mode MOSFET Product Description Features GSM2318A, N-Channel enhancement mode 40V/2.6A,RDS(ON)=68m @VGS=10V MOSFET, uses Advanced Trench 40V/2.2A,RDS(ON)=88m @VGS=4.5V Technology to provide excellent RDS(ON), low Super high density cell design for gate charge. extremely low RDS (ON) These devices are particularly suited for low

 9.20. Size:816K  globaltech semi
 gsm2301a.pdf

20V P-Channel Enhancement Mode MOSFET Product Description Features -20V/-2.6A,RDS(ON)=120m @VGS=-4.5V GSM2301A, P-Channel enhancement mode -20V/-2.2A,RDS(ON)=170m @VGS=-2.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) These devices are particularly suited for low

 9.21. Size:860K  globaltech semi
 gsm2337a.pdf

GSM2337A GSM2337A 30V P-Channel Enhancement Mode MOSFET Product Description Features -30V/-1.2A,RDS(ON)=890m @VGS=-10V GSM2337A, P-Channel enhancement mode -30V/-0.6A,RDS(ON)=1450m @VGS=-4.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) Exceptional on-resi

 9.22. Size:1189K  globaltech semi
 gsm2312.pdf

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM2312, N-Channel enhancement mode 20V/4.0A,RDS(ON)=36m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/3.2A,RDS(ON)=40m @VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/2.8A,RDS(ON)=52m @VGS=1.8V These devices are particularly suited for low Super high density cell design for e

 9.23. Size:477K  globaltech semi
 gsm2301.pdf

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2301, P-Channel enhancement mode -20V/-3.0A,RDS(ON)=105m @VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.4A,RDS(ON)=155m @VGS=-2.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) volta

 9.24. Size:947K  globaltech semi
 gsm2306a.pdf

GSM2306A 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM2306A, N-Channel enhancement mode 20V/1.8A,RDS(ON)=280m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/1.5A,RDS(ON)=340m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/1.2A,RDS(ON)=750m @VGS=1.8V Super high density cell design for These devices are particularl

 9.25. Size:950K  globaltech semi
 gsm2376.pdf

GSM2376 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM2376, N-Channel enhancement mode 60V/3.6A,RDS(ON)=70m @VGS=10V MOSFET, uses Advanced Trench Technology to 60V/2.8A,RDS(ON)=78m @VGS=4.5V provide excellent RDS(ON) ,low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low Exce

 9.26. Size:963K  globaltech semi
 gsm2304.pdf

GSM2304 GSM2304 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM2304, N-Channel enhancement mode 30V/3.6A,RDS(ON)=78m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/2.8A,RDS(ON)=105m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 9.27. Size:747K  globaltech semi
 gsm2304as.pdf

GSM2304AS 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM2304AS, N-Channel enhancement mode 30V/2.4A,RDS(ON)=65m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.0A,RDS(ON)=90m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low SOT-2

 9.28. Size:953K  globaltech semi
 gsm2379.pdf

GSM2379 GSM2379 60V P-Channel Enhancement Mode MOSFET Product Description Features -60V/-3.6A,RDS(ON)=135m @VGS=-10.0V GSM2379, P-Channel enhancement mode -60V/-2.6A,RDS(ON)=150m @VGS=-4.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) Exceptional on-resist

 9.29. Size:953K  globaltech semi
 gsm2307a.pdf

GSM2307A GSM2307A 20V P-Channel Enhancement Mode MOSFET Product Description Features -20V/-1.8A,RDS(ON)=520m @VGS=-4.5V GSM2307A, P-Channel enhancement mode -20V/-1.5A,RDS(ON)=870m @VGS=-2.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) Exceptional on-resi

 9.30. Size:461K  globaltech semi
 gsm2318.pdf

GSM2318 40V N-Channel Enhancement Mode MOSFET Product Description Features GSM2318, N-Channel enhancement mode 40V/3.6A,RDS(ON)=60m @VGS=10V MOSFET, uses Advanced Trench Technology to 40V/2.8A,RDS(ON)=80m @VGS=4.5V provide excellent RDS(ON) ,low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) Volta

 9.31. Size:1024K  globaltech semi
 gsm2319a.pdf

GSM2319A 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM2319A, P-Channel enhancement mode -40V/-3.0A,RDS(ON)=100m @VGS=-10V MOSFET, uses Advanced Trench Technology to -40V/-2.4A,RDS(ON)=130m @VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited f

 9.32. Size:813K  globaltech semi
 gsm2308a.pdf

GSM2308A 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM2308A, N-Channel enhancement mode 60V/2.8A,RDS(ON)=135m @VGS=10V MOSFET, uses Advanced Trench Technology 60V/2.0A,RDS(ON)=145m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 9.33. Size:847K  globaltech semi
 gsm2311a.pdf

GSM2311A 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2311A, P-Channel enhancement mode -20V/-2.8A,RDS(ON)=68m @VGS=-4.5V MOSFET, uses Advanced Trench -20V/-2.2A,RDS(ON)=80m @VGS=-2.5V Technology to provide excellent RDS(ON), low -20V/-1.8A,RDS(ON)=105m @VGS=-1.8V gate charge. Super high density cell design for These devices are parti

 9.34. Size:885K  globaltech semi
 gsm2324a.pdf

GSM2324A 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM2324A, N-Channel enhancement mode 100V/2.3A,RDS(ON)=310m @VGS=10V MOSFET, uses Advanced Trench Technology to 100V/1.8A,RDS(ON)=320m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for

 9.35. Size:914K  globaltech semi
 gsm2303.pdf

GSM2303 GSM2303 30V P-Channel Enhancement Mode MOSFET Product Description Features -30V/-3.6A,RDS(ON)=130m @VGS=-10.0V GSM2303, P-Channel enhancement mode -30V/-3.2A,RDS(ON)=170m @VGS=-4.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) Exceptional on-resist

 9.36. Size:948K  globaltech semi
 gsm2306ae.pdf

GSM2306AE 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM2306AE, N-Channel enhancement mode 20V/1.8A,RDS(ON)=280m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/1.5A,RDS(ON)=340m @VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/1.2A,RDS(ON)=750m @VGS=1.8V Super high density cell design for These devices are particula

 9.37. Size:760K  globaltech semi
 gsm2308.pdf

 9.38. Size:448K  globaltech semi
 gsm2302s.pdf

GSM2302S GSM2302S 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM2302S, N-Channel enhancement mode 20V/3.6A,RDS(ON)=85m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/3.2A,RDS(ON)=100m @VGS=2.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for

 9.39. Size:870K  globaltech semi
 gsm2343a.pdf

GSM2343A 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2343A, P-Channel enhancement mode -20V/-2.8A,RDS(ON)=70m @VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.4A,RDS(ON)=92m @VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-2.0A,RDS(ON)=180m @VGS=-1.8V Super high density cell design for These devices are part

 9.40. Size:671K  globaltech semi
 gsm2323a.pdf

GSM2323A 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM2323A, P-Channel enhancement mode -30V/-2.8A,RDS(ON)=155m @VGS=-10V MOSFET, uses Advanced Trench -30V/-2.4A,RDS(ON)=240m @VGS=-4.5V Technology to provide excellent RDS(ON), low Super high density cell design for gate charge. extremely low RDS (ON) These devices are particularly suited for

 9.41. Size:1178K  globaltech semi
 gsm2312a.pdf

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM2312A, N-Channel enhancement mode 20V/2.8A,RDS(ON)=45m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/2.2A,RDS(ON)=48m @VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/1.8A,RDS(ON)=64m @VGS=1.8V These devices are particularly suited for low Super high density cell design for

 9.42. Size:754K  globaltech semi
 gsm2304s.pdf

GSM2304S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM2304S, N-Channel enhancement mode 30V/3.6A,RDS(ON)=60m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/2.5A,RDS(ON)=85m @VGS=4.5V provide excellent RDS(ON) ,low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (O