GSM3019S Datasheet. Equivalente

 ..1. Size:937K  globaltech semi
 gsm3019s.pdf

GSM3019S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3019S, N-Channel enhancement mode 30V/35A,RDS(ON)=9m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/20A,RDS(ON)=13m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) volta

 8.1. Size:926K  globaltech semi
 gsm3016s.pdf

GSM3016S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3016S, N-Channel enhancement mode 30V/45A,RDS(ON)=6m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/30A,RDS(ON)=9m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltag

 8.2. Size:898K  globaltech semi
 gsm3015s.pdf

GSM3015S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3015S, N-Channel enhancement mode 30V/45A,RDS(ON)=5.1m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/30A,RDS(ON)=6.8m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) vo

 9.1. Size:770K  globaltech semi
 gsm3025s.pdf

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3025S, N-Channel enhancement mode 30V/9.0A,RDS(ON)=32m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/7.0A,RDS(ON)=36m @VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/5.0A,RDS(ON)=42m @VGS=2.5V These devices are particularly suited for low Super high density cell design for e

 9.2. Size:983K  globaltech semi
 gsm3050s.pdf

30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3050S, P-Channel enhancement mode -30V/-9A,RDS(ON)=60m @VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-7A,RDS(ON)=72m @VGS=-4.5V provide excellent RDS(ON), low gate charge. -30V/-5A,RDS(ON)=108m @VGS=-2.5V These devices are particularly suited for low Super high density cell design f

 9.3. Size:1006K  globaltech semi
 gsm3030.pdf

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3030, N-Channel enhancement mode 30V/12A,RDS(ON)= 30m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/10A,RDS(ON)= 40m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

 9.4. Size:926K  globaltech semi
 gsm3009s.pdf

GSM3009S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3009S, N-Channel enhancement mode 30V/35A,RDS(ON)=8.5m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/20A,RDS(ON)=11.5m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) v