GSM3019S
MOSFET. Datasheet pdf. Equivalent
Type Designator: GSM3019S
Marking Code: 3019S
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 40
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 60
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 10
nC
trⓘ - Rise Time: 10
nS
Cossⓘ -
Output Capacitance: 200
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009
Ohm
Package: TO-252-2L
GSM3019S
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
GSM3019S
Datasheet (PDF)
..1. Size:937K globaltech semi
gsm3019s.pdf 
GSM3019S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3019S, N-Channel enhancement mode 30V/35A,RDS(ON)=9m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/20A,RDS(ON)=13m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) volta
8.1. Size:926K globaltech semi
gsm3016s.pdf
GSM3016S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3016S, N-Channel enhancement mode 30V/45A,RDS(ON)=6m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/30A,RDS(ON)=9m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltag
8.2. Size:898K globaltech semi
gsm3015s.pdf
GSM3015S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3015S, N-Channel enhancement mode 30V/45A,RDS(ON)=5.1m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/30A,RDS(ON)=6.8m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) vo
9.1. Size:770K globaltech semi
gsm3025s.pdf
30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3025S, N-Channel enhancement mode 30V/9.0A,RDS(ON)=32m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/7.0A,RDS(ON)=36m@VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/5.0A,RDS(ON)=42m@VGS=2.5V These devices are particularly suited for low Super high density cell design for e
9.2. Size:983K globaltech semi
gsm3050s.pdf
30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3050S, P-Channel enhancement mode -30V/-9A,RDS(ON)=60m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-7A,RDS(ON)=72m@VGS=-4.5V provide excellent RDS(ON), low gate charge. -30V/-5A,RDS(ON)=108m@VGS=-2.5V These devices are particularly suited for low Super high density cell design f
9.3. Size:1006K globaltech semi
gsm3030.pdf
30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3030, N-Channel enhancement mode 30V/12A,RDS(ON)= 30m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/10A,RDS(ON)= 40m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power
9.4. Size:926K globaltech semi
gsm3009s.pdf
GSM3009S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3009S, N-Channel enhancement mode 30V/35A,RDS(ON)=8.5m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/20A,RDS(ON)=11.5m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) v
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