GSM3050S Todos los transistores

 

GSM3050S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: GSM3050S
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 15 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 95 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm
   Paquete / Cubierta: TO-252-2L
 

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GSM3050S Datasheet (PDF)

 ..1. Size:983K  globaltech semi
 gsm3050s.pdf pdf_icon

GSM3050S

30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3050S, P-Channel enhancement mode -30V/-9A,RDS(ON)=60m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-7A,RDS(ON)=72m@VGS=-4.5V provide excellent RDS(ON), low gate charge. -30V/-5A,RDS(ON)=108m@VGS=-2.5V These devices are particularly suited for low Super high density cell design f

 9.1. Size:770K  globaltech semi
 gsm3025s.pdf pdf_icon

GSM3050S

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3025S, N-Channel enhancement mode 30V/9.0A,RDS(ON)=32m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/7.0A,RDS(ON)=36m@VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/5.0A,RDS(ON)=42m@VGS=2.5V These devices are particularly suited for low Super high density cell design for e

 9.2. Size:926K  globaltech semi
 gsm3016s.pdf pdf_icon

GSM3050S

GSM3016S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3016S, N-Channel enhancement mode 30V/45A,RDS(ON)=6m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/30A,RDS(ON)=9m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltag

 9.3. Size:1006K  globaltech semi
 gsm3030.pdf pdf_icon

GSM3050S

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3030, N-Channel enhancement mode 30V/12A,RDS(ON)= 30m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/10A,RDS(ON)= 40m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

MOSTRAR MÁS

Otros transistores... GSM2912 , GSM2913W , GSM3009S , GSM3015S , GSM3016S , GSM3019S , GSM3025S , GSM3030 , K4145 , GSM3302W , GSM3306WS , GSM3309WS , GSM3310W , GSM3316W , GSM3326WS , GSM3346W , GSM3366W .

History: PSMN025-100D | GSM4124WS | AP50P10D | PJS6413 | GSM3015S | CJPF05N65

 

 
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