GSM3316W Todos los transistores

 

GSM3316W MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: GSM3316W
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 17 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 6 nS
   Cossⓘ - Capacitancia de salida: 30 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.14 Ohm
   Paquete / Cubierta: DFN3X3-8L
 

 Búsqueda de reemplazo de GSM3316W MOSFET

   - Selección ⓘ de transistores por parámetros

 

GSM3316W Datasheet (PDF)

 ..1. Size:856K  globaltech semi
 gsm3316w.pdf pdf_icon

GSM3316W

GSM3316W GSM3316W 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM3316W, N-Channel enhancement mode 60V/8A,RDS(ON)=140m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/6A,RDS(ON)=148m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremelylow RDS (ON) These devices are particularly suited

 8.1. Size:816K  globaltech semi
 gsm3310w.pdf pdf_icon

GSM3316W

GSM3310W GSM3310W 30V N-Channel Enhancement Mode MOSFETProduct Description Features GSM3310W, N-Channel enhancement mode 30V/16A,RDS(ON)=17m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/10A,RDS(ON)=19m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremelylow RDS (ON) These devices are particularly suited f

 9.1. Size:1456K  globaltech semi
 gsm3346w.pdf pdf_icon

GSM3316W

GSM3346W 40V N & P Pair Enhancement Mode MOSFET Product Description Features GSM3346W, N & P Pair enhancement mode N-ChannelMOSFET, uses Advanced Trench Technology to 40V/15A,RDS(ON)=28m@VGS=10V provide excellent RDS(ON), low gate charge. 40V/12A,RDS(ON)=38m@VGS=4.5V P-ChannelThese devices are particularly suited for low -40V/-12A,RDS(ON)=45m@VGS=-10V voltage p

 9.2. Size:897K  globaltech semi
 gsm3309ws.pdf pdf_icon

GSM3316W

GSM3309WS GSM3309WS 30V N-Channel Enhancement Mode MOSFETProduct Description Features GSM3309WS, N-Channel enhancement mode 30V/20A,RDS(ON)=8m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/15A,RDS(ON)=11m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited

MOSTRAR MÁS

Otros transistores... GSM3019S , GSM3025S , GSM3030 , GSM3050S , GSM3302W , GSM3306WS , GSM3309WS , GSM3310W , IRF530 , GSM3326WS , GSM3346W , GSM3366W , GSM3400 , GSM3400A , GSM3400AS , GSM3400S , GSM3401AS .

History: AOT280L | SVF6N60FQ

 

 
Back to Top

 


 
.