All MOSFET. GSM3316W Datasheet

 

GSM3316W Datasheet and Replacement


   Type Designator: GSM3316W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 17 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
   Package: DFN3X3-8L
 

 GSM3316W substitution

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GSM3316W Datasheet (PDF)

 ..1. Size:856K  globaltech semi
 gsm3316w.pdf pdf_icon

GSM3316W

GSM3316W GSM3316W 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM3316W, N-Channel enhancement mode 60V/8A,RDS(ON)=140m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/6A,RDS(ON)=148m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremelylow RDS (ON) These devices are particularly suited

 8.1. Size:816K  globaltech semi
 gsm3310w.pdf pdf_icon

GSM3316W

GSM3310W GSM3310W 30V N-Channel Enhancement Mode MOSFETProduct Description Features GSM3310W, N-Channel enhancement mode 30V/16A,RDS(ON)=17m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/10A,RDS(ON)=19m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremelylow RDS (ON) These devices are particularly suited f

 9.1. Size:1456K  globaltech semi
 gsm3346w.pdf pdf_icon

GSM3316W

GSM3346W 40V N & P Pair Enhancement Mode MOSFET Product Description Features GSM3346W, N & P Pair enhancement mode N-ChannelMOSFET, uses Advanced Trench Technology to 40V/15A,RDS(ON)=28m@VGS=10V provide excellent RDS(ON), low gate charge. 40V/12A,RDS(ON)=38m@VGS=4.5V P-ChannelThese devices are particularly suited for low -40V/-12A,RDS(ON)=45m@VGS=-10V voltage p

 9.2. Size:897K  globaltech semi
 gsm3309ws.pdf pdf_icon

GSM3316W

GSM3309WS GSM3309WS 30V N-Channel Enhancement Mode MOSFETProduct Description Features GSM3309WS, N-Channel enhancement mode 30V/20A,RDS(ON)=8m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/15A,RDS(ON)=11m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited

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Datasheet: GSM3019S , GSM3025S , GSM3030 , GSM3050S , GSM3302W , GSM3306WS , GSM3309WS , GSM3310W , IRF1010E , GSM3326WS , GSM3346W , GSM3366W , GSM3400 , GSM3400A , GSM3400AS , GSM3400S , GSM3401AS .

History: PSMN057-200P | ME6612D-G | SL2302 | JMTK160P03A

Keywords - GSM3316W MOSFET datasheet

 GSM3316W cross reference
 GSM3316W equivalent finder
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 GSM3316W substitution
 GSM3316W replacement

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