GSM3400S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: GSM3400S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12 nS
Cossⓘ - Capacitancia de salida: 70 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.042 Ohm
Paquete / Cubierta: SOT-23-3L
GSM3400S Datasheet (PDF)
gsm3400s.pdf

GSM3400S GSM3400S 30V N-Channel Enhancement Mode MOSFET Product Description Features 30V/4.0A,RDS(ON)=42m@VGS=10V GSM3400S, N-Channel enhancement mode 30V/3.0A,RDS(ON)=44m@VGS=4.5V MOSFET, uses Advanced Trench Technology 30V/2.6A,RDS(ON)=50m@VGS=2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) The
gsm3400.pdf

GSM3400 GSM3400 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3400, N-Channel enhancement mode 30V/4.0A,RDS(ON)=48m@VGS=10V MOSFET, uses Advanced Trench 30V/3.5A,RDS(ON)=52m@VGS=4.5V Technology to provide excellent RDS(ON), low 30V/2.8A,RDS(ON)=58m@VGS=2.5V gate charge. These devices are particularly Super high density cell des
gsm3400a.pdf

GSM3400A 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3400A, N-Channel enhancement mode 30V/2.4A,RDS(ON)=54m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/1.8A,RDS(ON)=58m@VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/1.5A,RDS(ON)=65m@VGS=2.5V Super high density cell design for These devices are particularly suited for lo
gsm3400as.pdf

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3400AS, N-Channel enhancement mode 30V/2.8A,RDS(ON)=50m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/2.5A,RDS(ON)=55m@VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/2.2A,RDS(ON)=75m@VGS=2.5V These devices are particularly suited for low Super high density cell design for
Otros transistores... GSM3310W , GSM3316W , GSM3326WS , GSM3346W , GSM3366W , GSM3400 , GSM3400A , GSM3400AS , 20N50 , GSM3401AS , GSM3401S , GSM3402 , GSM3402A , GSM3403 , GSM3403A , GSM3404 , GSM3405 .



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JMTQ080P03A | JMTQ075N03D | JMTQ062N04A | JMTQ055N04A | JMTQ050N02A | JMTQ040N03A | JMTQ025N02A | JMTP11DN10A | JMTP110N06D | JMTP110N06A | JMTP085P02A | JMTP080P03A | JMTP080N04D | JMTP080N04A | JMTP075N06A | JMTP045N03A
Popular searches
ksa1013 | mje15032g datasheet | 2sc2166 | 2sc5198 | 2sc1971 | tip41c transistor datasheet | 2n3907 | 12n60