GSM3400S Datasheet. Specs and Replacement

Type Designator: GSM3400S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm

Package: SOT-23-3L

GSM3400S substitution

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GSM3400S datasheet

 ..1. Size:921K  globaltech semi
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GSM3400S

GSM3400S GSM3400S 30V N-Channel Enhancement Mode MOSFET Product Description Features 30V/4.0A,RDS(ON)=42m @VGS=10V GSM3400S, N-Channel enhancement mode 30V/3.0A,RDS(ON)=44m @VGS=4.5V MOSFET, uses Advanced Trench Technology 30V/2.6A,RDS(ON)=50m @VGS=2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) The... See More ⇒

 7.1. Size:891K  globaltech semi
 gsm3400.pdf pdf_icon

GSM3400S

GSM3400 GSM3400 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3400, N-Channel enhancement mode 30V/4.0A,RDS(ON)=48m @VGS=10V MOSFET, uses Advanced Trench 30V/3.5A,RDS(ON)=52m @VGS=4.5V Technology to provide excellent RDS(ON), low 30V/2.8A,RDS(ON)=58m @VGS=2.5V gate charge. These devices are particularly Super high density cell des... See More ⇒

 7.2. Size:922K  globaltech semi
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GSM3400S

GSM3400A 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3400A, N-Channel enhancement mode 30V/2.4A,RDS(ON)=54m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/1.8A,RDS(ON)=58m @VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/1.5A,RDS(ON)=65m @VGS=2.5V Super high density cell design for These devices are particularly suited for lo... See More ⇒

 7.3. Size:452K  globaltech semi
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GSM3400S

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3400AS, N-Channel enhancement mode 30V/2.8A,RDS(ON)=50m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/2.5A,RDS(ON)=55m @VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/2.2A,RDS(ON)=75m @VGS=2.5V These devices are particularly suited for low Super high density cell design for ... See More ⇒

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Detailed specifications: GSM3310W, GSM3316W, GSM3326WS, GSM3346W, GSM3366W, GSM3400, GSM3400A, GSM3400AS, STP80NF70, GSM3401AS, GSM3401S, GSM3402, GSM3402A, GSM3403, GSM3403A, GSM3404, GSM3405

Keywords - GSM3400S MOSFET specs

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