GSM3406AS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

GSM3406AS Datasheet (PDF)

..1. Size:877K globaltech semi
gsm3406as.pdf pdf_icon

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406AS, N-Channel enhancement mode 30V/2.8A,RDS(ON)=45m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/2.4A,RDS(ON)=55m@VGS=4.5V provide excellent RDS(ON), low gate charge. These Super high density cell design for extremely devices are particularly suited for low voltage low RDS (ON) powe

6.1. Size:863K globaltech semi
gsm3406a.pdf pdf_icon

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406A, N-Channel enhancement mode 30V/2.4A,RDS(ON)=48m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/1.8A,RDS(ON)=58m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

7.1. Size:885K globaltech semi
gsm3406s.pdf pdf_icon

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406S, N-Channel enhancement mode 30V/4.0A,RDS(ON)=40m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.5A,RDS(ON)=50m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

7.2. Size:884K globaltech semi
gsm3406.pdf pdf_icon

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406, N-Channel enhancement mode 30V/4.0A,RDS(ON)=42m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.5A,RDS(ON)=52m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

Otros transistores... GSM3402 , GSM3402A , GSM3403 , GSM3403A , GSM3404 , GSM3405 , GSM3406 , GSM3406A , SKD502T , GSM3406S , GSM3407AS , GSM3407S , GSM3410 , GSM3411 , GSM3413 , GSM3413A , GSM3414A .