GSM3406AS Datasheet. Specs and Replacement

Type Designator: GSM3406AS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm

Package: SOT-23

GSM3406AS substitution

- MOSFET ⓘ Cross-Reference Search

 

GSM3406AS datasheet

 ..1. Size:877K  globaltech semi
 gsm3406as.pdf pdf_icon

GSM3406AS

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406AS, N-Channel enhancement mode 30V/2.8A,RDS(ON)=45m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/2.4A,RDS(ON)=55m @VGS=4.5V provide excellent RDS(ON), low gate charge. These Super high density cell design for extremely devices are particularly suited for low voltage low RDS (ON) powe... See More ⇒

 6.1. Size:863K  globaltech semi
 gsm3406a.pdf pdf_icon

GSM3406AS

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406A, N-Channel enhancement mode 30V/2.4A,RDS(ON)=48m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/1.8A,RDS(ON)=58m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power... See More ⇒

 7.1. Size:885K  globaltech semi
 gsm3406s.pdf pdf_icon

GSM3406AS

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406S, N-Channel enhancement mode 30V/4.0A,RDS(ON)=40m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.5A,RDS(ON)=50m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power... See More ⇒

 7.2. Size:884K  globaltech semi
 gsm3406.pdf pdf_icon

GSM3406AS

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406, N-Channel enhancement mode 30V/4.0A,RDS(ON)=42m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.5A,RDS(ON)=52m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power ... See More ⇒

SHOW MORE

Detailed specifications: GSM3402, GSM3402A, GSM3403, GSM3403A, GSM3404, GSM3405, GSM3406, GSM3406A, RFP50N06, GSM3406S, GSM3407AS, GSM3407S, GSM3410, GSM3411, GSM3413, GSM3413A, GSM3414A

Keywords - GSM3406AS MOSFET specs

 GSM3406AS cross reference

 GSM3406AS equivalent finder

 GSM3406AS pdf lookup

 GSM3406AS substitution

 GSM3406AS replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs