GSM3430W MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: GSM3430W
Código: 43*
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 90 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 VQgⓘ - Carga de la puerta: 12 nC
trⓘ - Tiempo de subida: 15 nS
Cossⓘ - Capacitancia de salida: 90 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm
Paquete / Cubierta: TSOP-6
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GSM3430W Datasheet (PDF)
gsm3430w.pdf
GSM3430W 90V N-Channel Enhancement Mode MOSFET Product Description Features GSM3430W, N-Channel enhancement mode 90V/4.0A,RDS(ON)=150m@VGS=10V MOSFET, uses Advanced Trench Technology to 90V/3.2A,RDS(ON)=155m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low
gsm3436.pdf
GSM3436 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3436, N-Channel enhancement mode 30V/3.6A,RDS(ON)=72m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.0A,RDS(ON)=82m@VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/2.2A,RDS(ON)=160m@VGS=2.5V Super high density cell design for extremely These devices are partic
gsm3434w.pdf
GSM3434W 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM3434W, N-Channel enhancement mode 100V/3.2A,RDS(ON)=170m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/2.6A,RDS(ON)=185m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low Ex
gsm3432.pdf
GSM3432 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3432, N-Channel enhancement mode 30V/3.6A,RDS(ON)=75m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.0A,RDS(ON)=80m@VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/2.2A,RDS(ON)=100m@VGS=2.5V Super high density cell design for extremely These devices are partic
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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