GSM3434W Todos los transistores

 

GSM3434W MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: GSM3434W
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 35 nS
   Cossⓘ - Capacitancia de salida: 50 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.17 Ohm
   Paquete / Cubierta: TSOP-6
 

 Búsqueda de reemplazo de GSM3434W MOSFET

   - Selección ⓘ de transistores por parámetros

 

GSM3434W Datasheet (PDF)

 ..1. Size:1009K  globaltech semi
 gsm3434w.pdf pdf_icon

GSM3434W

GSM3434W 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM3434W, N-Channel enhancement mode 100V/3.2A,RDS(ON)=170m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/2.6A,RDS(ON)=185m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low Ex

 8.1. Size:895K  globaltech semi
 gsm3436.pdf pdf_icon

GSM3434W

GSM3436 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3436, N-Channel enhancement mode 30V/3.6A,RDS(ON)=72m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.0A,RDS(ON)=82m@VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/2.2A,RDS(ON)=160m@VGS=2.5V Super high density cell design for extremely These devices are partic

 8.2. Size:895K  globaltech semi
 gsm3432.pdf pdf_icon

GSM3434W

GSM3432 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3432, N-Channel enhancement mode 30V/3.6A,RDS(ON)=75m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.0A,RDS(ON)=80m@VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/2.2A,RDS(ON)=100m@VGS=2.5V Super high density cell design for extremely These devices are partic

 8.3. Size:842K  globaltech semi
 gsm3430w.pdf pdf_icon

GSM3434W

GSM3430W 90V N-Channel Enhancement Mode MOSFET Product Description Features GSM3430W, N-Channel enhancement mode 90V/4.0A,RDS(ON)=150m@VGS=10V MOSFET, uses Advanced Trench Technology to 90V/3.2A,RDS(ON)=155m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

MOSTRAR MÁS

Otros transistores... GSM3415 , GSM3416 , GSM3424 , GSM3424A , GSM3425 , GSM3426 , GSM3430W , GSM3432 , IRFZ48N , GSM3436 , GSM3446 , GSM3452 , GSM3454 , GSM3456 , GSM3456S , GSM3458 , GSM3458BW .

History: IRFH7787 | AP20N06BD | GSM3414S | GSM3430W | NCE3402 | GSM3413

 

 
Back to Top

 


 
.