All MOSFET. GSM3434W Datasheet

 

GSM3434W Datasheet and Replacement


   Type Designator: GSM3434W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
   Package: TSOP-6
 

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GSM3434W Datasheet (PDF)

 ..1. Size:1009K  globaltech semi
 gsm3434w.pdf pdf_icon

GSM3434W

GSM3434W 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM3434W, N-Channel enhancement mode 100V/3.2A,RDS(ON)=170m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/2.6A,RDS(ON)=185m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low Ex

 8.1. Size:895K  globaltech semi
 gsm3436.pdf pdf_icon

GSM3434W

GSM3436 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3436, N-Channel enhancement mode 30V/3.6A,RDS(ON)=72m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.0A,RDS(ON)=82m@VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/2.2A,RDS(ON)=160m@VGS=2.5V Super high density cell design for extremely These devices are partic

 8.2. Size:895K  globaltech semi
 gsm3432.pdf pdf_icon

GSM3434W

GSM3432 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3432, N-Channel enhancement mode 30V/3.6A,RDS(ON)=75m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.0A,RDS(ON)=80m@VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/2.2A,RDS(ON)=100m@VGS=2.5V Super high density cell design for extremely These devices are partic

 8.3. Size:842K  globaltech semi
 gsm3430w.pdf pdf_icon

GSM3434W

GSM3430W 90V N-Channel Enhancement Mode MOSFET Product Description Features GSM3430W, N-Channel enhancement mode 90V/4.0A,RDS(ON)=150m@VGS=10V MOSFET, uses Advanced Trench Technology to 90V/3.2A,RDS(ON)=155m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

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Datasheet: GSM3415 , GSM3416 , GSM3424 , GSM3424A , GSM3425 , GSM3426 , GSM3430W , GSM3432 , IRFZ48N , GSM3436 , GSM3446 , GSM3452 , GSM3454 , GSM3456 , GSM3456S , GSM3458 , GSM3458BW .

Keywords - GSM3434W MOSFET datasheet

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