GSM3454 Datasheet. Equivalente

 ..1. Size:438K  globaltech semi
 gsm3454.pdf

GSM3454 40V N-Channel Enhancement Mode MOSFET Product Description Features GSM3454, N-Channel enhancement mode 40V/5.6A,RDS(ON)=54m @VGS=10V MOSFET, uses Advanced Trench Technology to 40V/3.6A,RDS(ON)=74m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 8.1. Size:882K  globaltech semi
 gsm3458.pdf

GSM3458 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM3458, N-Channel enhancement mode 60V/5.6A,RDS(ON)=60m @VGS=10V MOSFET, uses Advanced Trench Technology to 60V/3.8A,RDS(ON)=66m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 8.2. Size:841K  globaltech semi
 gsm3456.pdf

GSM3456 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3456, N-Channel enhancement mode 30V/5.6A,RDS(ON)=40m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/4.2A,RDS(ON)=50m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 8.3. Size:966K  globaltech semi
 gsm3459.pdf

GSM3459 60V P-Channel Enhancement Mode MOSFET Product Description Features GSM3459, P-Channel enhancement mode -60V/-4.8A,RDS(ON)=128m @VGS=-10V MOSFET, uses Advanced Trench Technology to -60V/-3.6A,RDS(ON)=138m @VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for

 8.4. Size:841K  globaltech semi
 gsm3452.pdf

GSM3452 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3452, N-Channel enhancement mode 30V/5.6A,RDS(ON)=48m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/4.2A,RDS(ON)=52m @VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/3.0A,RDS(ON)=58m @VGS=2.5V Super high density cell design for extremely These devices are particu

 8.5. Size:805K  globaltech semi
 gsm3458bw.pdf

GSM3458BW 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM3458BW, N-Channel enhancement mode 60V/5.6A,RDS(ON)=135m @VGS=10V MOSFET, uses Advanced Trench Technology to 60V/3.8A,RDS(ON)=145m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for l

 8.6. Size:868K  globaltech semi
 gsm3456s.pdf

GSM3456S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3456S, N-Channel enhancement mode 30V/5.4A,RDS(ON)=40m @VGS=10.0V MOSFET, uses Advanced Trench Technology to 30V/4.8A,RDS(ON)=50m @VGS=4.5V provide excellent RDS(ON) ,low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for