GSM3454 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: GSM3454
Código: 54*
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 2 W
Voltaje máximo drenador - fuente |Vds|: 40 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 5.6 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
Carga de la puerta (Qg): 10 nC
Tiempo de subida (tr): 12 nS
Conductancia de drenaje-sustrato (Cd): 75 pF
Resistencia entre drenaje y fuente RDS(on): 0.054 Ohm
Paquete / Cubierta: TSOP-6
Búsqueda de reemplazo de MOSFET GSM3454
GSM3454 Datasheet (PDF)
gsm3454.pdf
GSM3454 40V N-Channel Enhancement Mode MOSFET Product Description Features GSM3454, N-Channel enhancement mode 40V/5.6A,RDS(ON)=54m@VGS=10V MOSFET, uses Advanced Trench Technology to 40V/3.6A,RDS(ON)=74m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low
gsm3458.pdf
GSM3458 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM3458, N-Channel enhancement mode 60V/5.6A,RDS(ON)=60m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/3.8A,RDS(ON)=66m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low
gsm3456.pdf
GSM3456 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3456, N-Channel enhancement mode 30V/5.6A,RDS(ON)=40m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/4.2A,RDS(ON)=50m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low
gsm3459.pdf
GSM3459 60V P-Channel Enhancement Mode MOSFET Product Description Features GSM3459, P-Channel enhancement mode -60V/-4.8A,RDS(ON)=128m@VGS=-10V MOSFET, uses Advanced Trench Technology to -60V/-3.6A,RDS(ON)=138m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for
gsm3452.pdf
GSM3452 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3452, N-Channel enhancement mode 30V/5.6A,RDS(ON)=48m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/4.2A,RDS(ON)=52m@VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/3.0A,RDS(ON)=58m@VGS=2.5V Super high density cell design for extremely These devices are particu
gsm3458bw.pdf
GSM3458BW 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM3458BW, N-Channel enhancement mode 60V/5.6A,RDS(ON)=135m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/3.8A,RDS(ON)=145m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for l
gsm3456s.pdf
GSM3456S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3456S, N-Channel enhancement mode 30V/5.4A,RDS(ON)=40m@VGS=10.0V MOSFET, uses Advanced Trench Technology to 30V/4.8A,RDS(ON)=50m@VGS=4.5V provide excellent RDS(ON) ,low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for
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