All MOSFET. GSM3454 Datasheet

 

GSM3454 Datasheet and Replacement


   Type Designator: GSM3454
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.054 Ohm
   Package: TSOP-6
 

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GSM3454 Datasheet (PDF)

 ..1. Size:438K  globaltech semi
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GSM3454

GSM3454 40V N-Channel Enhancement Mode MOSFET Product Description Features GSM3454, N-Channel enhancement mode 40V/5.6A,RDS(ON)=54m@VGS=10V MOSFET, uses Advanced Trench Technology to 40V/3.6A,RDS(ON)=74m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 8.1. Size:882K  globaltech semi
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GSM3454

GSM3458 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM3458, N-Channel enhancement mode 60V/5.6A,RDS(ON)=60m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/3.8A,RDS(ON)=66m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 8.2. Size:841K  globaltech semi
 gsm3456.pdf pdf_icon

GSM3454

GSM3456 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3456, N-Channel enhancement mode 30V/5.6A,RDS(ON)=40m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/4.2A,RDS(ON)=50m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 8.3. Size:966K  globaltech semi
 gsm3459.pdf pdf_icon

GSM3454

GSM3459 60V P-Channel Enhancement Mode MOSFET Product Description Features GSM3459, P-Channel enhancement mode -60V/-4.8A,RDS(ON)=128m@VGS=-10V MOSFET, uses Advanced Trench Technology to -60V/-3.6A,RDS(ON)=138m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for

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Datasheet: GSM3425 , GSM3426 , GSM3430W , GSM3432 , GSM3434W , GSM3436 , GSM3446 , GSM3452 , IRF9640 , GSM3456 , GSM3456S , GSM3458 , GSM3458BW , GSM3459 , GSM3460 , GSM3466 , GSM3481S .

History: MTE130N20KJ3 | 2SJ492-ZJ | 2SK905 | GSM3452 | WST4045 | GSM3404 | SL2N65F

Keywords - GSM3454 MOSFET datasheet

 GSM3454 cross reference
 GSM3454 equivalent finder
 GSM3454 lookup
 GSM3454 substitution
 GSM3454 replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 
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