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GSM3459 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: GSM3459
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 45 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.128 Ohm
   Paquete / Cubierta: TSOP-6
 

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GSM3459 Datasheet (PDF)

 ..1. Size:966K  globaltech semi
 gsm3459.pdf pdf_icon

GSM3459

GSM3459 60V P-Channel Enhancement Mode MOSFET Product Description Features GSM3459, P-Channel enhancement mode -60V/-4.8A,RDS(ON)=128m@VGS=-10V MOSFET, uses Advanced Trench Technology to -60V/-3.6A,RDS(ON)=138m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for

 8.1. Size:882K  globaltech semi
 gsm3458.pdf pdf_icon

GSM3459

GSM3458 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM3458, N-Channel enhancement mode 60V/5.6A,RDS(ON)=60m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/3.8A,RDS(ON)=66m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 8.2. Size:841K  globaltech semi
 gsm3456.pdf pdf_icon

GSM3459

GSM3456 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3456, N-Channel enhancement mode 30V/5.6A,RDS(ON)=40m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/4.2A,RDS(ON)=50m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 8.3. Size:438K  globaltech semi
 gsm3454.pdf pdf_icon

GSM3459

GSM3454 40V N-Channel Enhancement Mode MOSFET Product Description Features GSM3454, N-Channel enhancement mode 40V/5.6A,RDS(ON)=54m@VGS=10V MOSFET, uses Advanced Trench Technology to 40V/3.6A,RDS(ON)=74m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

MOSTRAR MÁS

Otros transistores... GSM3436 , GSM3446 , GSM3452 , GSM3454 , GSM3456 , GSM3456S , GSM3458 , GSM3458BW , MMD60R360PRH , GSM3460 , GSM3466 , GSM3481S , GSM3484 , GSM3484S , GSM3485 , GSM3497 , GSM3679S .

History: FDWS86369-F085 | TK5A65DA

 

 
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