All MOSFET. GSM3459 Datasheet

 

GSM3459 Datasheet and Replacement


   Type Designator: GSM3459
   Marking Code: 59*
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id| ⓘ - Maximum Drain Current: 4.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 5 nC
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.128 Ohm
   Package: TSOP-6
 

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GSM3459 Datasheet (PDF)

 ..1. Size:966K  globaltech semi
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GSM3459

GSM3459 60V P-Channel Enhancement Mode MOSFET Product Description Features GSM3459, P-Channel enhancement mode -60V/-4.8A,RDS(ON)=128m@VGS=-10V MOSFET, uses Advanced Trench Technology to -60V/-3.6A,RDS(ON)=138m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for

 8.1. Size:882K  globaltech semi
 gsm3458.pdf pdf_icon

GSM3459

GSM3458 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM3458, N-Channel enhancement mode 60V/5.6A,RDS(ON)=60m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/3.8A,RDS(ON)=66m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 8.2. Size:841K  globaltech semi
 gsm3456.pdf pdf_icon

GSM3459

GSM3456 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3456, N-Channel enhancement mode 30V/5.6A,RDS(ON)=40m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/4.2A,RDS(ON)=50m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 8.3. Size:438K  globaltech semi
 gsm3454.pdf pdf_icon

GSM3459

GSM3454 40V N-Channel Enhancement Mode MOSFET Product Description Features GSM3454, N-Channel enhancement mode 40V/5.6A,RDS(ON)=54m@VGS=10V MOSFET, uses Advanced Trench Technology to 40V/3.6A,RDS(ON)=74m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

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Datasheet: GSM3436 , GSM3446 , GSM3452 , GSM3454 , GSM3456 , GSM3456S , GSM3458 , GSM3458BW , MMD60R360PRH , GSM3460 , GSM3466 , GSM3481S , GSM3484 , GSM3484S , GSM3485 , GSM3497 , GSM3679S .

History: VB2290A | FCHD125N65S3R0 | IRF9243 | NCE6050KA | FML12N60ES | STB11NM60 | R5019ANX

Keywords - GSM3459 MOSFET datasheet

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