GSM3911W MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: GSM3911W
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 7.8 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 4.3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5 nS
Cossⓘ - Capacitancia de salida: 56 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.068 Ohm
Paquete / Cubierta: DFN2X2-6L
Búsqueda de reemplazo de GSM3911W MOSFET
GSM3911W Datasheet (PDF)
gsm3911w.pdf

GSM3911W GSM3911W 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3911W, P-Channel enhancement mode -30V/-3.0A,RDS(ON)=68m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-2.0A,RDS(ON)=95m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited f
gsm3981.pdf

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM3981, P-Channel enhancement mode -20V/-3.2A,RDS(ON)=100m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.4A,RDS(ON)=135m@VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-1.5A,RDS(ON)=190m@VGS=-1.8V These devices are particularly suited for low Super high density cell
gsm3993.pdf

30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3993, P-Channel enhancement mode -30V/-3.6A,RDS(ON)=150m@VGS=-10.0V MOSFET, uses Advanced Trench Technology to -30V/-3.2A,RDS(ON)=235m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) volt
Otros transistores... GSM3484 , GSM3484S , GSM3485 , GSM3497 , GSM3679S , GSM3804 , GSM3806W , GSM3814W , IRF840 , GSM3981 , GSM3993 , GSM4048WS , GSM4102W , GSM4124WS , GSM4134 , GSM4134W , GSM4172S .
History: SVS11N70MJD2 | RJK0305DPB | DMP32D4SW | DH400P06D | DH140N10D | RJK0304DPB | RJK0304DPC
History: SVS11N70MJD2 | RJK0305DPB | DMP32D4SW | DH400P06D | DH140N10D | RJK0304DPB | RJK0304DPC



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AP30N10D | AP30N06Y | AP30N06DF | AP30N06D | AP30N03DF | AP30N02D | AP30H04NF | AP30H04DF | AP30G03GD | AP300N04TLG5 | AP2P15MI | AP2N7002A | AP2N30MI | AP2N20MI | AP280N10MP | AP20G03GD
Popular searches
bu406 datasheet | irfb7437 | tip32a | p75nf75 mosfet equivalent | irfpe50 | tip50 | transistor bc547 datasheet | bc109c