GSM3911W Datasheet. Specs and Replacement
Type Designator: GSM3911W
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 7.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 56 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.068 Ohm
Package: DFN2X2-6L
GSM3911W substitution
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GSM3911W datasheet
gsm3911w.pdf
GSM3911W GSM3911W 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3911W, P-Channel enhancement mode -30V/-3.0A,RDS(ON)=68m @VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-2.0A,RDS(ON)=95m @VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited f... See More ⇒
gsm3981.pdf
20V P-Channel Enhancement Mode MOSFET Product Description Features GSM3981, P-Channel enhancement mode -20V/-3.2A,RDS(ON)=100m @VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.4A,RDS(ON)=135m @VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-1.5A,RDS(ON)=190m @VGS=-1.8V These devices are particularly suited for low Super high density cell ... See More ⇒
gsm3993.pdf
30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3993, P-Channel enhancement mode -30V/-3.6A,RDS(ON)=150m @VGS=-10.0V MOSFET, uses Advanced Trench Technology to -30V/-3.2A,RDS(ON)=235m @VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) volt... See More ⇒
Detailed specifications: GSM3484, GSM3484S, GSM3485, GSM3497, GSM3679S, GSM3804, GSM3806W, GSM3814W, 20N60, GSM3981, GSM3993, GSM4048WS, GSM4102W, GSM4124WS, GSM4134, GSM4134W, GSM4172S
Keywords - GSM3911W MOSFET specs
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