GSM4435 Todos los transistores

 

GSM4435 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: GSM4435
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 200 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm
   Paquete / Cubierta: SOP-8P
 

 Búsqueda de reemplazo de GSM4435 MOSFET

   - Selección ⓘ de transistores por parámetros

 

GSM4435 Datasheet (PDF)

 ..1. Size:776K  globaltech semi
 gsm4435.pdf pdf_icon

GSM4435

GSM4435 GSM4435 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4435, P-Channel enhancement mode -30V/-10A,RDS(ON)= 28m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-7.0A,RDS(ON)= 37m@VGS=-4.5V provide excellent RDS(ON), low gate charge. These Super high density cell design for extremely devices are particularly suited for low voltage lo

 0.1. Size:1086K  globaltech semi
 gsm4435ws.pdf pdf_icon

GSM4435

GSM4435WS GSM4435WS 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4435WS, P-Channel enhancement mode -30V/-9A,RDS(ON)= 17m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-7A,RDS(ON)= 24m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited

 0.2. Size:981K  globaltech semi
 gsm4435w.pdf pdf_icon

GSM4435

GSM4435W 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4435W, P-Channel enhancement mode -30V/-10A,RDS(ON)=24m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-7A,RDS(ON)=35m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low SOP-

 0.3. Size:1035K  globaltech semi
 gsm4435s.pdf pdf_icon

GSM4435

GSM4435S GSM4435S 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4435S, P-Channel enhancement mode -30V/-9A,RDS(ON)=18m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-7A,RDS(ON)=26m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for

MOSTRAR MÁS

Otros transistores... MTB36N06V , PHP36N06E , PHB36N06E , FTD36N06N , SFP65N06 , IPI16CN10N , GSM4424 , GSM4424W , IRF9540N , GSM4435S , GSM4435W , GSM4435WS , GSM4440 , GSM4440W , GSM4447 , GSM4486 , GSM4510S .

History: TK1Q90A | SML50J10RU2 | OSG80R650IF | SSF65R099SFD | GSM2324A | MCH6662

 

 
Back to Top

 


 
.