GSM4435 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: GSM4435

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.8 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 10 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 200 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm

Encapsulados: SOP-8P

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GSM4435 datasheet

 ..1. Size:776K  globaltech semi
 gsm4435.pdf pdf_icon

GSM4435

GSM4435 GSM4435 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4435, P-Channel enhancement mode -30V/-10A,RDS(ON)= 28m @VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-7.0A,RDS(ON)= 37m @VGS=-4.5V provide excellent RDS(ON), low gate charge. These Super high density cell design for extremely devices are particularly suited for low voltage lo

 0.1. Size:1086K  globaltech semi
 gsm4435ws.pdf pdf_icon

GSM4435

GSM4435WS GSM4435WS 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4435WS, P-Channel enhancement mode -30V/-9A,RDS(ON)= 17m @VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-7A,RDS(ON)= 24m @VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited

 0.2. Size:981K  globaltech semi
 gsm4435w.pdf pdf_icon

GSM4435

GSM4435W 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4435W, P-Channel enhancement mode -30V/-10A,RDS(ON)=24m @VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-7A,RDS(ON)=35m @VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low SOP-

 0.3. Size:1035K  globaltech semi
 gsm4435s.pdf pdf_icon

GSM4435

GSM4435S GSM4435S 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4435S, P-Channel enhancement mode -30V/-9A,RDS(ON)=18m @VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-7A,RDS(ON)=26m @VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for

MOSTRAR MÁS

Otros transistores... MTB36N06V, PHP36N06E, PHB36N06E, FTD36N06N, SFP65N06, IPI16CN10N, GSM4424, GSM4424W, IRF9540N, GSM4435S, GSM4435W, GSM4435WS, GSM4440, GSM4440W, GSM4447, GSM4486, GSM4510S