GSM4435 Datasheet and Replacement. Cross Reference Search

GSM4435 Datasheet (PDF)

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GSM4435 GSM4435 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4435, P-Channel enhancement mode -30V/-10A,RDS(ON)= 28m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-7.0A,RDS(ON)= 37m@VGS=-4.5V provide excellent RDS(ON), low gate charge. These Super high density cell design for extremely devices are particularly suited for low voltage lo

0.1. Size:1086K globaltech semi
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GSM4435WS GSM4435WS 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4435WS, P-Channel enhancement mode -30V/-9A,RDS(ON)= 17m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-7A,RDS(ON)= 24m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited

0.2. Size:981K globaltech semi
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GSM4435W 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4435W, P-Channel enhancement mode -30V/-10A,RDS(ON)=24m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-7A,RDS(ON)=35m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low SOP-

0.3. Size:1035K globaltech semi
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GSM4435S GSM4435S 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4435S, P-Channel enhancement mode -30V/-9A,RDS(ON)=18m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-7A,RDS(ON)=26m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for

Datasheet: MTB36N06V , PHP36N06E , PHB36N06E , FTD36N06N , SFP65N06 , IPI16CN10N , GSM4424 , GSM4424W , IRF1010E , GSM4435S , GSM4435W , GSM4435WS , GSM4440 , GSM4440W , GSM4447 , GSM4486 , GSM4510S .