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GSM4559 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: GSM4559
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 85 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.042 Ohm
   Paquete / Cubierta: SOP-8P
 

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GSM4559 Datasheet (PDF)

 ..1. Size:1207K  globaltech semi
 gsm4559.pdf pdf_icon

GSM4559

GSM4559 60V N & P Pair Enhancement Mode MOSFET Product Description Features GSM4559, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 60V/6.8A,RDS(ON)=42m@VGS=10V provide excellent RDS(ON), low gate charge. 60V/5.6A,RDS(ON)=50m@VGS=4.5V P-Channel These devices are particularly suited for low -60V/-4.0A,RDS(ON)=100m@VGS=-10V v

 9.1. Size:1190K  globaltech semi
 gsm4516w.pdf pdf_icon

GSM4559

GSM4516W 30V N & P Pair Enhancement Mode MOSFET Product Description Features GSM4516W, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 30V/8A,RDS(ON)=15m@VGS=10V provide excellent RDS(ON), low gate charge. 30V/6A,RDS(ON)=20m@VGS=4.5V P-Channel These devices are particularly suited for low -30V/-8A,RDS(ON)=28m@VGS=-10V voltag

 9.2. Size:1304K  globaltech semi
 gsm4516.pdf pdf_icon

GSM4559

GSM4516 30V N & P Pair Enhancement Mode MOSFET Product Description Features GSM4516, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 30V/8A,RDS(ON)=15m@VGS=10V provide excellent RDS(ON), low gate charge. 30V/6A,RDS(ON)=20m@VGS=4.5V P-Channel These devices are particularly suited for low -30V/-8A,RDS(ON)=28m@VGS=-10V voltage power man

 9.3. Size:1077K  globaltech semi
 gsm4510s.pdf pdf_icon

GSM4559

GSM4510S 100V N & P Pair Enhancement Mode MOSFET Product Description Features GSM4510S, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 100V/6.8A,RDS(ON)=150m@VGS=10V provide excellent RDS(ON), low gate charge. 100V/5.6A,RDS(ON)=165m@VGS=4.5V P-Channel These devices are particularly suited for low -100V/-6.2A,RDS(ON)=198m@VGS=

MOSTRAR MÁS

Otros transistores... GSM4510S , GSM4516 , GSM4516W , GSM4535 , GSM4535W , GSM4539S , GSM4539WS , GSM4546 , IRLZ44N , GSM4599 , GSM4599W , GSM4634WS , GSM4637 , GSM4637W , GSM4804 , GSM4822S , GSM4822WS .

History: PSMN2R7-30BL | UPA2708GR | NCE4525 | FCH041N60E | STP32NM50N | SMK0780FD | STH110N10F7-2

 

 
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