GSM4896 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: GSM4896
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 90 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.115 Ohm
   Paquete / Cubierta: SOP-8

Búsqueda de reemplazo de MOSFET GSM4896

GSM4896 Datasheet (PDF)

..1. Size:826K globaltech semi
gsm4896.pdf

GSM4896 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM4896, N-Channel enhancement mode 100V/6.8A,RDS(ON)=115m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/5.6A,RDS(ON)=125m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for lo

9.1. Size:747K globaltech semi
gsm4822ws.pdf

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4822WS, N-Channel enhancement mode 30V/6.0A,RDS(ON)=34m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/5.0A,RDS(ON)=44m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage powe

9.2. Size:723K globaltech semi
gsm4804.pdf

40V N-Channel Enhancement Mode MOSFET Product Description Features GSM4804, N-Channel enhancement mode 40V/16A,RDS(ON)= 48m@VGS=10V MOSFET, uses Advanced Trench Technology to 40V/10A,RDS(ON)= 70m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

9.3. Size:813K globaltech semi
gsm4822s.pdf

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4822S, N-Channel enhancement mode 30V/6.0A,RDS(ON)=30m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/5.0A,RDS(ON)=42m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

9.4. Size:872K globaltech semi
gsm4850ws.pdf

GSM4850WS 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM4850WS, N-Channel enhancement mode 60V/8.5A,RDS(ON)=22m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/7.2A,RDS(ON)=24m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

9.5. Size:908K globaltech semi
gsm4874ws.pdf

GSM4874WS 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM4874WS, N-Channel enhancement mode 60V/12A,RDS(ON)=11m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/10A,RDS(ON)=15m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

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