GSM4922W Todos los transistores

 

GSM4922W MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: GSM4922W
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 40 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.29 Ohm
   Paquete / Cubierta: SOP-8
 

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GSM4922W Datasheet (PDF)

 ..1. Size:846K  globaltech semi
 gsm4922w.pdf pdf_icon

GSM4922W

GSM4922W 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM4922W, N-Channel enhancement mode 100V/2.0A,RDS(ON)=290m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/1.5A,RDS(ON)=300m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for

 8.1. Size:1468K  globaltech semi
 gsm4924.pdf pdf_icon

GSM4922W

40V N-Channel Enhancement Mode MOSFET Product Description Features GSM4924, N-Channel enhancement mode 40V/8A,RDS(ON)= 24m@VGS=10V MOSFET, uses Advanced Trench Technology to 40V/6A,RDS(ON)= 48m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power ma

 8.2. Size:834K  globaltech semi
 gsm4925ws.pdf pdf_icon

GSM4922W

GSM4925WS 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4925WS, P-Channel enhancement mode -30V/-8.0A,RDS(ON)= 18m@VGS= -10V OSFET, uses Advanced Trench Technology to -30V/-6.0A,RDS(ON)= 26m@VGS= -4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suite

 8.3. Size:719K  globaltech semi
 gsm4925.pdf pdf_icon

GSM4922W

GSM4925 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4925, P-Channel enhancement mode -30V/-7.2A,RDS(ON)= 28m@VGS= -10V OSFET, uses Advanced Trench Technology to -30V/-5.8A,RDS(ON)= 37m@VGS= -4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited fo

MOSTRAR MÁS

Otros transistores... GSM4804 , GSM4822S , GSM4822WS , GSM4850WS , GSM4874WS , GSM4896 , GSM4900W , GSM4906 , STP80NF70 , GSM4924 , GSM4924W , GSM4925 , GSM4925S , GSM4925W , GSM4925WS , GSM4936S , GSM4936WS .

History: KP978GC | STP4LN80K5 | IPS70R360P7S | IPP60R070CFD7 | NVTFS5C658NL | SQJ420EP | 2SK3019TT1

 

 
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