GSM4922W Datasheet. Specs and Replacement

Type Designator: GSM4922W

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm

Package: SOP-8

GSM4922W substitution

- MOSFET ⓘ Cross-Reference Search

 

GSM4922W datasheet

 ..1. Size:846K  globaltech semi
 gsm4922w.pdf pdf_icon

GSM4922W

GSM4922W 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM4922W, N-Channel enhancement mode 100V/2.0A,RDS(ON)=290m @VGS=10V MOSFET, uses Advanced Trench Technology to 100V/1.5A,RDS(ON)=300m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for ... See More ⇒

 8.1. Size:1468K  globaltech semi
 gsm4924.pdf pdf_icon

GSM4922W

40V N-Channel Enhancement Mode MOSFET Product Description Features GSM4924, N-Channel enhancement mode 40V/8A,RDS(ON)= 24m @VGS=10V MOSFET, uses Advanced Trench Technology to 40V/6A,RDS(ON)= 48m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power ma... See More ⇒

 8.2. Size:834K  globaltech semi
 gsm4925ws.pdf pdf_icon

GSM4922W

GSM4925WS 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4925WS, P-Channel enhancement mode -30V/-8.0A,RDS(ON)= 18m @VGS= -10V OSFET, uses Advanced Trench Technology to -30V/-6.0A,RDS(ON)= 26m @VGS= -4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suite... See More ⇒

 8.3. Size:719K  globaltech semi
 gsm4925.pdf pdf_icon

GSM4922W

GSM4925 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4925, P-Channel enhancement mode -30V/-7.2A,RDS(ON)= 28m @VGS= -10V OSFET, uses Advanced Trench Technology to -30V/-5.8A,RDS(ON)= 37m @VGS= -4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited fo... See More ⇒

SHOW MORE

Detailed specifications: GSM4804, GSM4822S, GSM4822WS, GSM4850WS, GSM4874WS, GSM4896, GSM4900W, GSM4906, 10N65, GSM4924, GSM4924W, GSM4925, GSM4925S, GSM4925W, GSM4925WS, GSM4936S, GSM4936WS

Keywords - GSM4922W MOSFET specs

 GSM4922W cross reference

 GSM4922W equivalent finder

 GSM4922W pdf lookup

 GSM4922W substitution

 GSM4922W replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.