All MOSFET. GSM4922W Datasheet

 

GSM4922W Datasheet and Replacement


   Type Designator: GSM4922W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm
   Package: SOP-8
 

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GSM4922W Datasheet (PDF)

 ..1. Size:846K  globaltech semi
 gsm4922w.pdf pdf_icon

GSM4922W

GSM4922W 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM4922W, N-Channel enhancement mode 100V/2.0A,RDS(ON)=290m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/1.5A,RDS(ON)=300m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for

 8.1. Size:1468K  globaltech semi
 gsm4924.pdf pdf_icon

GSM4922W

40V N-Channel Enhancement Mode MOSFET Product Description Features GSM4924, N-Channel enhancement mode 40V/8A,RDS(ON)= 24m@VGS=10V MOSFET, uses Advanced Trench Technology to 40V/6A,RDS(ON)= 48m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power ma

 8.2. Size:834K  globaltech semi
 gsm4925ws.pdf pdf_icon

GSM4922W

GSM4925WS 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4925WS, P-Channel enhancement mode -30V/-8.0A,RDS(ON)= 18m@VGS= -10V OSFET, uses Advanced Trench Technology to -30V/-6.0A,RDS(ON)= 26m@VGS= -4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suite

 8.3. Size:719K  globaltech semi
 gsm4925.pdf pdf_icon

GSM4922W

GSM4925 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4925, P-Channel enhancement mode -30V/-7.2A,RDS(ON)= 28m@VGS= -10V OSFET, uses Advanced Trench Technology to -30V/-5.8A,RDS(ON)= 37m@VGS= -4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited fo

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Datasheet: GSM4804 , GSM4822S , GSM4822WS , GSM4850WS , GSM4874WS , GSM4896 , GSM4900W , GSM4906 , 10N65 , GSM4924 , GSM4924W , GSM4925 , GSM4925S , GSM4925W , GSM4925WS , GSM4936S , GSM4936WS .

History: AM70N15-40P | NCE50NF330F | GMM3x100-01X1-SMD | FQB7P20TM_F085 | PSMNR90-40YLH | NCE2004Y | DMT3006LFV-7

Keywords - GSM4922W MOSFET datasheet

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