GSM4924W MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: GSM4924W
   Código: 4924W
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 10 nC
   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 110 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm
   Paquete / Cubierta: SOP-8P

Búsqueda de reemplazo de MOSFET GSM4924W

GSM4924W Datasheet (PDF)

..1. Size:1478K globaltech semi
gsm4924w.pdf

GSM4924W 40V N-Channel Enhancement Mode MOSFET Product Description Features GSM4924W, N-Channel enhancement mode 40V/8A,RDS(ON)=22m@VGS=10V MOSFET, uses Advanced Trench Technology to 40V/6A,RDS(ON)=28m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low S

7.1. Size:1468K globaltech semi
gsm4924.pdf

40V N-Channel Enhancement Mode MOSFET Product Description Features GSM4924, N-Channel enhancement mode 40V/8A,RDS(ON)= 24m@VGS=10V MOSFET, uses Advanced Trench Technology to 40V/6A,RDS(ON)= 48m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power ma

8.1. Size:834K globaltech semi
gsm4925ws.pdf

GSM4925WS 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4925WS, P-Channel enhancement mode -30V/-8.0A,RDS(ON)= 18m@VGS= -10V OSFET, uses Advanced Trench Technology to -30V/-6.0A,RDS(ON)= 26m@VGS= -4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suite

8.2. Size:719K globaltech semi
gsm4925.pdf

GSM4925 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4925, P-Channel enhancement mode -30V/-7.2A,RDS(ON)= 28m@VGS= -10V OSFET, uses Advanced Trench Technology to -30V/-5.8A,RDS(ON)= 37m@VGS= -4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited fo

8.3. Size:833K globaltech semi
gsm4925s.pdf

GSM4925S 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4925S, P-Channel enhancement mode -30V/-7.5A,RDS(ON)= 18m@VGS= -10V OSFET, uses Advanced Trench Technology to -30V/-6.0A,RDS(ON)= 26m@VGS= -4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited

8.4. Size:823K globaltech semi
gsm4925w.pdf

GSM4925W 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4925W, P-Channel enhancement mode -30V/-7.2A,RDS(ON)= 30m@VGS= -10V OSFET, uses Advanced Trench Technology to -30V/-5.8A,RDS(ON)= 36m@VGS= -4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited

8.5. Size:846K globaltech semi
gsm4922w.pdf

GSM4922W 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM4922W, N-Channel enhancement mode 100V/2.0A,RDS(ON)=290m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/1.5A,RDS(ON)=300m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for

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