GSM4996 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: GSM4996
Código: 4996
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.8 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 90 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 7.6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 VQgⓘ - Carga de la puerta: 10 nC
trⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 80 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.068 Ohm
Paquete / Cubierta: SOP-8P
Búsqueda de reemplazo de MOSFET GSM4996
GSM4996 Datasheet (PDF)
gsm4996.pdf
GSM4996 90V N-Channel Enhancement Mode MOSFET Product Description Features GSM4996, N-Channel enhancement mode 90V/7.6A,RDS(ON)=68m@VGS=10V MOSFET, uses Advanced Trench Technology to 90V/6.8A,RDS(ON)=75m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low
gsm4998.pdf
GSM4998 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM4998, N-Channel enhancement mode 100V/5.6A,RDS(ON)=130m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/4.2A,RDS(ON)=145m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for lo
gsm4998w.pdf
GSM4998W 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM4998W, N-Channel enhancement mode 100V/5.6A,RDS(ON)=120m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/4.2A,RDS(ON)=130m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for
gsm4997.pdf
GSM4997 90V N-Channel Enhancement Mode MOSFET Product Description Features GSM4997, N-Channel enhancement mode 90V/6.8A,RDS(ON)=68m@VGS=10V MOSFET, uses Advanced Trench Technology to 90V/5.6A,RDS(ON)=75m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low
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