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GSM4996 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: GSM4996
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 90 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 80 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.068 Ohm
   Paquete / Cubierta: SOP-8P
 

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GSM4996 Datasheet (PDF)

 ..1. Size:831K  globaltech semi
 gsm4996.pdf pdf_icon

GSM4996

GSM4996 90V N-Channel Enhancement Mode MOSFET Product Description Features GSM4996, N-Channel enhancement mode 90V/7.6A,RDS(ON)=68m@VGS=10V MOSFET, uses Advanced Trench Technology to 90V/6.8A,RDS(ON)=75m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 8.1. Size:939K  globaltech semi
 gsm4998.pdf pdf_icon

GSM4996

GSM4998 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM4998, N-Channel enhancement mode 100V/5.6A,RDS(ON)=130m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/4.2A,RDS(ON)=145m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for lo

 8.2. Size:916K  globaltech semi
 gsm4998w.pdf pdf_icon

GSM4996

GSM4998W 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM4998W, N-Channel enhancement mode 100V/5.6A,RDS(ON)=120m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/4.2A,RDS(ON)=130m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for

 8.3. Size:801K  globaltech semi
 gsm4997.pdf pdf_icon

GSM4996

GSM4997 90V N-Channel Enhancement Mode MOSFET Product Description Features GSM4997, N-Channel enhancement mode 90V/6.8A,RDS(ON)=68m@VGS=10V MOSFET, uses Advanced Trench Technology to 90V/5.6A,RDS(ON)=75m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

MOSTRAR MÁS

Otros transistores... GSM4936S , GSM4936WS , GSM4946 , GSM4946BW , GSM4946W , GSM4948 , GSM4953S , GSM4953WS , RU6888R , GSM4997 , GSM4998 , GSM4998W , GSM5004S , GSM5008S , GSM501DEA , GSM5604 , GSM5606 .

History: AP0504GH-HF | IPD60R1K5CE | CHM4435AZGP | DMN2215UDM | BLF571 | NTMFS4C054N | BSC084P03NS3EG

 

 
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