GSM4996 Datasheet. Specs and Replacement

Type Designator: GSM4996

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 90 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.068 Ohm

Package: SOP-8P

GSM4996 substitution

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GSM4996 datasheet

 ..1. Size:831K  globaltech semi
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GSM4996

GSM4996 90V N-Channel Enhancement Mode MOSFET Product Description Features GSM4996, N-Channel enhancement mode 90V/7.6A,RDS(ON)=68m @VGS=10V MOSFET, uses Advanced Trench Technology to 90V/6.8A,RDS(ON)=75m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low ... See More ⇒

 8.1. Size:939K  globaltech semi
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GSM4996

GSM4998 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM4998, N-Channel enhancement mode 100V/5.6A,RDS(ON)=130m @VGS=10V MOSFET, uses Advanced Trench Technology to 100V/4.2A,RDS(ON)=145m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for lo... See More ⇒

 8.2. Size:916K  globaltech semi
 gsm4998w.pdf pdf_icon

GSM4996

GSM4998W 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM4998W, N-Channel enhancement mode 100V/5.6A,RDS(ON)=120m @VGS=10V MOSFET, uses Advanced Trench Technology to 100V/4.2A,RDS(ON)=130m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for ... See More ⇒

 8.3. Size:801K  globaltech semi
 gsm4997.pdf pdf_icon

GSM4996

GSM4997 90V N-Channel Enhancement Mode MOSFET Product Description Features GSM4997, N-Channel enhancement mode 90V/6.8A,RDS(ON)=68m @VGS=10V MOSFET, uses Advanced Trench Technology to 90V/5.6A,RDS(ON)=75m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low ... See More ⇒

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Detailed specifications: GSM4936S, GSM4936WS, GSM4946, GSM4946BW, GSM4946W, GSM4948, GSM4953S, GSM4953WS, AO3400A, GSM4997, GSM4998, GSM4998W, GSM5004S, GSM5008S, GSM501DEA, GSM5604, GSM5606

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