GSM7002K Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: GSM7002K

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 0.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 35 nS

Cossⓘ - Capacitancia de salida: 8 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.4 Ohm

Encapsulados: SOT-23

 Búsqueda de reemplazo de GSM7002K MOSFET

- Selecciónⓘ de transistores por parámetros

 

GSM7002K datasheet

 ..1. Size:988K  globaltech semi
 gsm7002k.pdf pdf_icon

GSM7002K

GSM7002K 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM7002K, N-Channel enhancement mode 60V/0.5A , RDS(ON)=2.4 @VGS=10V MOSFET, uses Advanced Trench Technology to 60V/0.3A , RDS(ON)=3.0 @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low E

 7.1. Size:429K  globaltech semi
 gsm7002w.pdf pdf_icon

GSM7002K

GSM7002W 60V N-Channel Enhancement Mode MOSFET Product Description Features The GSM7002W is the N-Channel enhancement 60V/0.50A , RDS(ON)= 7.5 @VGS=10V mode field effect transistors are produced using 60V/0.05A , RDS(ON)= 7.5 @VGS=5V high cell density DMOS technology. Super high density cell design for extremely low RDS (ON) These products have been designed to minimize

 7.2. Size:289K  globaltech semi
 gsm7002t.pdf pdf_icon

GSM7002K

Dual N-Channel Enhancement Mode MOSFET Product Description Features The GSM7002T is the Dual N-Channel 60V/0.50A , RDS(ON)= 2.0 @VGS=10V enhancement mode field effect transistors are 60V/0.20A , RDS(ON)= 4.0 @VGS=4.5V produced using high cell density DMOS Super high density cell design for extremely technology. low RDS (ON) Exceptional on-resistance and maximum

 7.3. Size:434K  globaltech semi
 gsm7002j.pdf pdf_icon

GSM7002K

GSM7002J 60V N-Channel Enhancement Mode MOSFET Product Description Features The GSM7002J is the N-Channel enhancement 60V/0.50A , RDS(ON)= 7.5 @VGS=10V mode field effect transistors are produced using 60V/0.05A , RDS(ON)= 7.5 @VGS=5V high cell density DMOS technology. Super high density cell design for extremely low RDS (ON) These products have been designed to minimize

MOSTRAR MÁS

Otros transistores... GSM6602, GSM6604, GSM6801, GSM6820, GSM6830, GSM6993, GSM7002, GSM7002J, 50N06, GSM7002T, GSM7002W, GSM7106S, GSM7400, GSM7402, GSM7412, GSM7420, GSM7424S