GSM7002K Datasheet. Specs and Replacement

Type Designator: GSM7002K

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 8 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm

Package: SOT-23

GSM7002K substitution

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GSM7002K datasheet

 ..1. Size:988K  globaltech semi
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GSM7002K

GSM7002K 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM7002K, N-Channel enhancement mode 60V/0.5A , RDS(ON)=2.4 @VGS=10V MOSFET, uses Advanced Trench Technology to 60V/0.3A , RDS(ON)=3.0 @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low E... See More ⇒

 7.1. Size:429K  globaltech semi
 gsm7002w.pdf pdf_icon

GSM7002K

GSM7002W 60V N-Channel Enhancement Mode MOSFET Product Description Features The GSM7002W is the N-Channel enhancement 60V/0.50A , RDS(ON)= 7.5 @VGS=10V mode field effect transistors are produced using 60V/0.05A , RDS(ON)= 7.5 @VGS=5V high cell density DMOS technology. Super high density cell design for extremely low RDS (ON) These products have been designed to minimize... See More ⇒

 7.2. Size:289K  globaltech semi
 gsm7002t.pdf pdf_icon

GSM7002K

Dual N-Channel Enhancement Mode MOSFET Product Description Features The GSM7002T is the Dual N-Channel 60V/0.50A , RDS(ON)= 2.0 @VGS=10V enhancement mode field effect transistors are 60V/0.20A , RDS(ON)= 4.0 @VGS=4.5V produced using high cell density DMOS Super high density cell design for extremely technology. low RDS (ON) Exceptional on-resistance and maximum ... See More ⇒

 7.3. Size:434K  globaltech semi
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GSM7002K

GSM7002J 60V N-Channel Enhancement Mode MOSFET Product Description Features The GSM7002J is the N-Channel enhancement 60V/0.50A , RDS(ON)= 7.5 @VGS=10V mode field effect transistors are produced using 60V/0.05A , RDS(ON)= 7.5 @VGS=5V high cell density DMOS technology. Super high density cell design for extremely low RDS (ON) These products have been designed to minimize... See More ⇒

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Detailed specifications: GSM6602, GSM6604, GSM6801, GSM6820, GSM6830, GSM6993, GSM7002, GSM7002J, 50N06, GSM7002T, GSM7002W, GSM7106S, GSM7400, GSM7402, GSM7412, GSM7420, GSM7424S

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