All MOSFET. GSM7002K Datasheet

 

GSM7002K Datasheet and Replacement


   Type Designator: GSM7002K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 8 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
   Package: SOT-23
 

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GSM7002K Datasheet (PDF)

 ..1. Size:988K  globaltech semi
 gsm7002k.pdf pdf_icon

GSM7002K

GSM7002K 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM7002K, N-Channel enhancement mode 60V/0.5A , RDS(ON)=2.4@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/0.3A , RDS(ON)=3.0@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low E

 7.1. Size:429K  globaltech semi
 gsm7002w.pdf pdf_icon

GSM7002K

GSM7002W 60V N-Channel Enhancement Mode MOSFET Product Description Features The GSM7002W is the N-Channel enhancement 60V/0.50A , RDS(ON)= 7.5@VGS=10V mode field effect transistors are produced using 60V/0.05A , RDS(ON)= 7.5@VGS=5V high cell density DMOS technology. Super high density cell design for extremely low RDS (ON) These products have been designed to minimize

 7.2. Size:289K  globaltech semi
 gsm7002t.pdf pdf_icon

GSM7002K

Dual N-Channel Enhancement Mode MOSFET Product Description Features The GSM7002T is the Dual N-Channel 60V/0.50A , RDS(ON)= 2.0@VGS=10V enhancement mode field effect transistors are 60V/0.20A , RDS(ON)= 4.0@VGS=4.5V produced using high cell density DMOS Super high density cell design for extremely technology. low RDS (ON) Exceptional on-resistance and maximum

 7.3. Size:434K  globaltech semi
 gsm7002j.pdf pdf_icon

GSM7002K

GSM7002J 60V N-Channel Enhancement Mode MOSFET Product Description Features The GSM7002J is the N-Channel enhancement 60V/0.50A , RDS(ON)= 7.5@VGS=10V mode field effect transistors are produced using 60V/0.05A , RDS(ON)= 7.5@VGS=5V high cell density DMOS technology. Super high density cell design for extremely low RDS (ON) These products have been designed to minimize

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Datasheet: GSM6602 , GSM6604 , GSM6801 , GSM6820 , GSM6830 , GSM6993 , GSM7002 , GSM7002J , 50N06 , GSM7002T , GSM7002W , GSM7106S , GSM7400 , GSM7402 , GSM7412 , GSM7420 , GSM7424S .

History: GSM8936 | SI1489EDH

Keywords - GSM7002K MOSFET datasheet

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