GSM7002T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: GSM7002T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.64 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 8 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2 Ohm
   Paquete / Cubierta: SOT-363

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GSM7002T Datasheet (PDF)

..1. Size:289K globaltech semi
gsm7002t.pdf

Dual N-Channel Enhancement Mode MOSFET Product Description Features The GSM7002T is the Dual N-Channel 60V/0.50A , RDS(ON)= 2.0@VGS=10V enhancement mode field effect transistors are 60V/0.20A , RDS(ON)= 4.0@VGS=4.5V produced using high cell density DMOS Super high density cell design for extremely technology. low RDS (ON) Exceptional on-resistance and maximum

7.1. Size:429K globaltech semi
gsm7002w.pdf

GSM7002W 60V N-Channel Enhancement Mode MOSFET Product Description Features The GSM7002W is the N-Channel enhancement 60V/0.50A , RDS(ON)= 7.5@VGS=10V mode field effect transistors are produced using 60V/0.05A , RDS(ON)= 7.5@VGS=5V high cell density DMOS technology. Super high density cell design for extremely low RDS (ON) These products have been designed to minimize

7.2. Size:434K globaltech semi
gsm7002j.pdf

GSM7002J 60V N-Channel Enhancement Mode MOSFET Product Description Features The GSM7002J is the N-Channel enhancement 60V/0.50A , RDS(ON)= 7.5@VGS=10V mode field effect transistors are produced using 60V/0.05A , RDS(ON)= 7.5@VGS=5V high cell density DMOS technology. Super high density cell design for extremely low RDS (ON) These products have been designed to minimize

7.3. Size:988K globaltech semi
gsm7002k.pdf

GSM7002K 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM7002K, N-Channel enhancement mode 60V/0.5A , RDS(ON)=2.4@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/0.3A , RDS(ON)=3.0@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low E

7.4. Size:808K globaltech semi
gsm7002.pdf

60V N-Channel Enhancement Mode MOSFET Product Description Features The GS7002 is the N-Channel enhancement mode 60V/0.50A , RDS(ON)= 6.0@VGS=10V field effect transistors are produced using high cell 60V/0.30A , RDS(ON)= 7.0@VGS=5V density DMOS technology. These products have Super high density cell design for extremely been designed to minimize on-state resistance lo

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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