Справочник MOSFET. GSM7002T

 

GSM7002T MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: GSM7002T
   Маркировка: 702
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1.35 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.64 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 1 nC
   trⓘ - Время нарастания: 10 ns
   Cossⓘ - Выходная емкость: 8 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 2 Ohm
   Тип корпуса: SOT-363

 Аналог (замена) для GSM7002T

 

 

GSM7002T Datasheet (PDF)

 ..1. Size:289K  globaltech semi
 gsm7002t.pdf

GSM7002T GSM7002T

Dual N-Channel Enhancement Mode MOSFET Product Description Features The GSM7002T is the Dual N-Channel 60V/0.50A , RDS(ON)= 2.0@VGS=10V enhancement mode field effect transistors are 60V/0.20A , RDS(ON)= 4.0@VGS=4.5V produced using high cell density DMOS Super high density cell design for extremely technology. low RDS (ON) Exceptional on-resistance and maximum

 7.1. Size:429K  globaltech semi
 gsm7002w.pdf

GSM7002T GSM7002T

GSM7002W 60V N-Channel Enhancement Mode MOSFET Product Description Features The GSM7002W is the N-Channel enhancement 60V/0.50A , RDS(ON)= 7.5@VGS=10V mode field effect transistors are produced using 60V/0.05A , RDS(ON)= 7.5@VGS=5V high cell density DMOS technology. Super high density cell design for extremely low RDS (ON) These products have been designed to minimize

 7.2. Size:434K  globaltech semi
 gsm7002j.pdf

GSM7002T GSM7002T

GSM7002J 60V N-Channel Enhancement Mode MOSFET Product Description Features The GSM7002J is the N-Channel enhancement 60V/0.50A , RDS(ON)= 7.5@VGS=10V mode field effect transistors are produced using 60V/0.05A , RDS(ON)= 7.5@VGS=5V high cell density DMOS technology. Super high density cell design for extremely low RDS (ON) These products have been designed to minimize

 7.3. Size:988K  globaltech semi
 gsm7002k.pdf

GSM7002T GSM7002T

GSM7002K 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM7002K, N-Channel enhancement mode 60V/0.5A , RDS(ON)=2.4@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/0.3A , RDS(ON)=3.0@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low E

 7.4. Size:808K  globaltech semi
 gsm7002.pdf

GSM7002T GSM7002T

60V N-Channel Enhancement Mode MOSFET Product Description Features The GS7002 is the N-Channel enhancement mode 60V/0.50A , RDS(ON)= 6.0@VGS=10V field effect transistors are produced using high cell 60V/0.30A , RDS(ON)= 7.0@VGS=5V density DMOS technology. These products have Super high density cell design for extremely been designed to minimize on-state resistance lo

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