GSM7400 Todos los transistores

 

GSM7400 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: GSM7400
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 3.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 40 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.082 Ohm
   Paquete / Cubierta: SOT-323
 

 Búsqueda de reemplazo de GSM7400 MOSFET

   - Selección ⓘ de transistores por parámetros

 

GSM7400 Datasheet (PDF)

 ..1. Size:873K  globaltech semi
 gsm7400.pdf pdf_icon

GSM7400

GSM7400 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM7400, N-Channel enhancement mode 30V/3.6A , RDS(ON)= 82m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.0A , RDS(ON)= 90m@VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/2.2A , RDS(ON)= 102m@VGS=2.5V Super high density cell design for extremely These devices a

 8.1. Size:923K  globaltech semi
 gsm7402.pdf pdf_icon

GSM7400

GSM7402 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM7402, N-Channel enhancement mode 20V/3.6A , RDS(ON)= 60m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/3.2A , RDS(ON)= 70m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/2.8A , RDS(ON)= 90m@VGS=1.8V Super high density cell design for extremely These devices a

 9.1. Size:862K  globaltech semi
 gsm7412.pdf pdf_icon

GSM7400

GSM7412 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM7412, N-Channel enhancement mode 20V/3.8A , RDS(ON)= 52m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/3.2A , RDS(ON)= 56m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/2.8A , RDS(ON)= 68m@VGS=1.8V Super high density cell design for extremely These devices a

 9.2. Size:885K  globaltech semi
 gsm7472s.pdf pdf_icon

GSM7400

GSM7472S GSM7472S 30V N-Channel Enhancement Mode MOSFETProduct Description Features GSM7472S, N-Channel enhancement mode 30V/15A,RDS(ON)=8.6m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/13A,RDS(ON)=14m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremelylow RDS (ON) These devices are particularly suited

MOSTRAR MÁS

Otros transistores... GSM6830 , GSM6993 , GSM7002 , GSM7002J , GSM7002K , GSM7002T , GSM7002W , GSM7106S , IRF1404 , GSM7402 , GSM7412 , GSM7420 , GSM7424S , GSM7472S , GSM7617WS , GSM7619WS , GSM7923WS .

History: IPD031N03L | OSG60R150FF

 

 
Back to Top

 


 
.