GSM7400 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: GSM7400
Código: 00*
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.35 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 3.6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.2 VQgⓘ - Carga de la puerta: 2.3 nC
trⓘ - Tiempo de subida: 12 nS
Cossⓘ - Capacitancia de salida: 40 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.082 Ohm
Paquete / Cubierta: SOT-323
Búsqueda de reemplazo de MOSFET GSM7400
GSM7400 Datasheet (PDF)
gsm7400.pdf
GSM7400 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM7400, N-Channel enhancement mode 30V/3.6A , RDS(ON)= 82m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.0A , RDS(ON)= 90m@VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/2.2A , RDS(ON)= 102m@VGS=2.5V Super high density cell design for extremely These devices a
gsm7402.pdf
GSM7402 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM7402, N-Channel enhancement mode 20V/3.6A , RDS(ON)= 60m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/3.2A , RDS(ON)= 70m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/2.8A , RDS(ON)= 90m@VGS=1.8V Super high density cell design for extremely These devices a
gsm7412.pdf
GSM7412 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM7412, N-Channel enhancement mode 20V/3.8A , RDS(ON)= 52m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/3.2A , RDS(ON)= 56m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/2.8A , RDS(ON)= 68m@VGS=1.8V Super high density cell design for extremely These devices a
gsm7472s.pdf
GSM7472S GSM7472S 30V N-Channel Enhancement Mode MOSFETProduct Description Features GSM7472S, N-Channel enhancement mode 30V/15A,RDS(ON)=8.6m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/13A,RDS(ON)=14m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremelylow RDS (ON) These devices are particularly suited
gsm7424s.pdf
GSM7424S GSM7424S 30V N-Channel Enhancement Mode MOSFETProduct Description Features GSM7424S, N-Channel enhancement mode 30V/20A,RDS(ON)=5m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/15A,RDS(ON)=7m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremelylow RDS (ON) These devices are particularly suited for
gsm7420.pdf
GSM7420 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM7420, N-Channel enhancement mode 30V/3.6A , RDS(ON)= 60m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/2.6A , RDS(ON)= 70m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for l
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