GSM7400 Datasheet. Specs and Replacement

Type Designator: GSM7400

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 3.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.082 Ohm

Package: SOT-323

GSM7400 substitution

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GSM7400 datasheet

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GSM7400

GSM7400 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM7400, N-Channel enhancement mode 30V/3.6A , RDS(ON)= 82m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.0A , RDS(ON)= 90m @VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/2.2A , RDS(ON)= 102m @VGS=2.5V Super high density cell design for extremely These devices a... See More ⇒

 8.1. Size:923K  globaltech semi
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GSM7400

GSM7402 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM7402, N-Channel enhancement mode 20V/3.6A , RDS(ON)= 60m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/3.2A , RDS(ON)= 70m @VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/2.8A , RDS(ON)= 90m @VGS=1.8V Super high density cell design for extremely These devices a... See More ⇒

 9.1. Size:862K  globaltech semi
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GSM7400

GSM7412 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM7412, N-Channel enhancement mode 20V/3.8A , RDS(ON)= 52m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/3.2A , RDS(ON)= 56m @VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/2.8A , RDS(ON)= 68m @VGS=1.8V Super high density cell design for extremely These devices a... See More ⇒

 9.2. Size:885K  globaltech semi
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GSM7400

GSM7472S GSM7472S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM7472S, N-Channel enhancement mode 30V/15A,RDS(ON)=8.6m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/13A,RDS(ON)=14m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited ... See More ⇒

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Detailed specifications: GSM6830, GSM6993, GSM7002, GSM7002J, GSM7002K, GSM7002T, GSM7002W, GSM7106S, IRF1404, GSM7402, GSM7412, GSM7420, GSM7424S, GSM7472S, GSM7617WS, GSM7619WS, GSM7923WS

Keywords - GSM7400 MOSFET specs

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