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GSM7412 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: GSM7412
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 3.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 16 nS
   Cossⓘ - Capacitancia de salida: 120 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.052 Ohm
   Paquete / Cubierta: SOT-323
     - Selección de transistores por parámetros

 

GSM7412 Datasheet (PDF)

 ..1. Size:862K  globaltech semi
 gsm7412.pdf pdf_icon

GSM7412

GSM7412 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM7412, N-Channel enhancement mode 20V/3.8A , RDS(ON)= 52m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/3.2A , RDS(ON)= 56m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/2.8A , RDS(ON)= 68m@VGS=1.8V Super high density cell design for extremely These devices a

 9.1. Size:885K  globaltech semi
 gsm7472s.pdf pdf_icon

GSM7412

GSM7472S GSM7472S 30V N-Channel Enhancement Mode MOSFETProduct Description Features GSM7472S, N-Channel enhancement mode 30V/15A,RDS(ON)=8.6m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/13A,RDS(ON)=14m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremelylow RDS (ON) These devices are particularly suited

 9.2. Size:755K  globaltech semi
 gsm7424s.pdf pdf_icon

GSM7412

GSM7424S GSM7424S 30V N-Channel Enhancement Mode MOSFETProduct Description Features GSM7424S, N-Channel enhancement mode 30V/20A,RDS(ON)=5m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/15A,RDS(ON)=7m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremelylow RDS (ON) These devices are particularly suited for

 9.3. Size:923K  globaltech semi
 gsm7402.pdf pdf_icon

GSM7412

GSM7402 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM7402, N-Channel enhancement mode 20V/3.6A , RDS(ON)= 60m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/3.2A , RDS(ON)= 70m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/2.8A , RDS(ON)= 90m@VGS=1.8V Super high density cell design for extremely These devices a

MOSTRAR MÁS

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IPP80N06S2L-H5 | SIR496DP | IRFR9220 | IRFR430A | AO4914 | PSMN2R2-40YSD | BFC23

 

 
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